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STW20NM50
N-CHANNEL 550V @ Tjmax - 0.20 - 20A TO-247
MDmeshTM MOSFET

TYPE VDSS RDS(on) ID
(@Tjmax)
STW20NM50 550V < 0.25 20 A
TYPICAL RDS(on) = 0.20
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED 3
LOW INPUT CAPACITANCE AND GATE 1
2

CHARGE TO-247
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS

DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal INTERNAL SCHEMATIC DIAGRAM
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.

APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VGS Gate- source Voltage