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STB50NE08
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZETM " POWER MOSFET
TYPE V DSS R DS(on) ID
ST B50NE08 80 V <0.024 50 A
s TYPICAL RDS(on) = 0.020
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE AT 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION 3
1
s FOR THROUGH-HOLE VERSION CONTACT
SALES OFFICE
D2PAK
DESCRIPTION TO-263
This Power MOSFET is the latest development of (suffix "T4")
SGS-THOMSON unique "Single Feature SizeTM "
strip-based process. The resulting transistor
shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a INTERNAL SCHEMATIC DIAGRAM
remarkable manufacturing reproducibility.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V DS Drain-source Voltage (V GS = 0) 80 V
V DGR Drain- gate Voltage (R GS = 20 k) 80 V
V GS Gate-source Voltage