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STP55NE06L
STP55NE06LFP
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZETM " POWER MOSFET
TYPE V DSS R DS(on) ID
STP55NE06L 60 V < 0.022 55 A
STP55NE06LFP 60 V < 0.022 28 A
s TYPICAL RDS(on) = 0.018
s EXCEPTIONAL dV/dt CAPABILTY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s HIGH dV/dt CAPABILITY 3 3
s APPLICATION ORIENTED 2 2
1 1
CHARACTERIZATION
DESCRIPTION TO-220 TO220FP
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on- INTERNAL SCHEMATIC DIAGRAM
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP55NE06L STP55NE06LFP
V DS Drain-source Voltage (V GS = 0) 60 V
V DGR Drain- gate Voltage (R GS = 20 k) 60 V
V GS Gate-source Voltage