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SEMICONDUCTOR KTC3572
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
FEATURE
Low Collector-Emitter Saturation Voltage VCE(sat).
High Collector Current Capability : IC and ICP. B D
Higher Efficiency Leading to Less Heat Generation.
DIM MILLIMETERS
A 7.20 MAX
B 5.20 MAX
A
C 0.60 MAX
P D 2.50 MAX
MAXIMUM RATING (Ta=25 ) DEPTH:0.2
E 1.15 MAX
CHARACTERISTIC SYMBOL RATING UNIT C F 1.27
S G 1.70 MAX
G
Collector-Base Voltage VCBO 120 V Q H 0.55 MAX
K J _
14.00 + 0.50
J
Collector-Emitter Voltage VCEO 100 V K 0.35 MIN
R
L _
0.75 + 0.10
F F
Emitter-Base Voltage VEBO 5 V M 4
N 25
DC IC 1 H H H O 1.25
Collector Current A P 1.50
ICP M E M
Pulse 3 Q 0.10 MAX
R _
12.50 + 0.50
Base Current IB 300 mA
D
1 2 3 L S 1.00
H
O
Collector Power Dissipation PC 1 W N N
1. EMITTER
Junction Temperature Tj 150 2. COLLECTOR
3. BASE
Storage Temperature Range Tstg -55 150
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=100 A 120 - - V
Collector-Emitter Breakdown Voltage ** V(BR)CEO IC=1mA 100 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=100 A 5 - - V
Collector Cut-Off Current ICBO VCB=80V - - 100 nA
Emitter Cut-Off Current IEBO VEB=4V, IC=0A - - 100 nA
Collector-Emitter Cut-Off Current ICES VCES=80V, VBE=0V - - 100 nA
VCE(sat) (1) IC=100mA, IB=10mA - - 0.04
Collector-Emitter Saturation Voltage ** VCE(sat) (2) IC=500mA, IB=50mA - - 0.12 V
VCE(sat) (3) IC=1A, IB=100mA - - 0.2
Base-Emitter Saturation Voltage ** VBE(sat) IC=1A, IB=100mA - - 1.05 V
Base-Emitter Voltag VBE VCE=10V, IC=1A - - 0.9 V
hFE(1) VCE=10V, IC=1mA 150 - -
hFE(2) VCE=10V, IC=250mA 150 - 500
DC Current Gain **
hFE(3) VCE=10V, IC=500mA 100 - -
hFE(4) VCE=10V, IC=1A 80 - -
Transition Frequency fT VCE=10V, IC=50mA, f=100MHz 100 - - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz - 9.5 - pF
** Pulse Width = 300 S, Duty Cycle 2%.
2010. 6. 4 Revision No : 0 1/3
KTC3572
VCE(sat) - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
10
COLLECTOR-EMITTER SATURATION
1
IC/IB=10 IC/IB=50
Ta=25 C
VOLTAGE VCE(sat) (V)
VOLTAGE VCE(sat) (V)
Ta=100 C
1
10-1
Ta=25 C 10-1
Ta=-55 C
10-2 10-2
10-1 1 10 102 103 104 10-1 1 10 102 103 104
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VBE - I C h FE - I C
1.2 600
BASE-EMITTER VOLTAGE VBE (V)
VCE=10V VCE=10V
DC CURRENT GAIN h FE
Ta=100 C
0.8 Ta=-55 C 400
Ta=25 C
Ta=25 C
0.4 200
Ta=100 C Ta=-55 C
0 0
-10-1 -1 -10 -102 -103 -104 -10-1 -1 -10 -102 -103 -104
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
VBE(sat) - I C I C - VCE
10 2
IC/IB=20 Ta=25 C IB=3150