am808-14.pdf part of ST am808-14 am808-14.pdf, . Electronic Components Datasheets Active components Transistors ST am808-14.pdf text manual preview

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AM80814-025
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS

.
. REFRACTORY/GOLD METALLIZATION
PRELIMINARY DATA

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.
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE

.
.
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY

. METAL/CERAMIC HERMETIC PACKAGE
POUT = 25 W MIN. WITH 7.0 dB GAIN .400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE BRANDING
AM80814-025 80814-25

PIN CONNECTION

DESCRIPTION
AM80814-025 is a high power silicon Class C tran-
sistor designed for ultra-broadband L-Band radar
applications.
This device is capable of operation over a broad
range of pulse widths and duty cycles. Low RF
thermal resistance and computerized automatic
wire bonding techniques ensure high reliability and
product consistency.
AM80814-025 is supplied in the industry-standard
AMPACTM hermetic Metal/Ceramic package incor- 1. Collector 3. Emitter
porating Input/Output impedance matching. 2. Base 4. Base

ABSOLUTE MAXIMUM RATINGS (T case = 25