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TIP35A/35B/35C
TIP36A/36B/36C
COMPLEMENTARY SILICON HIGH POWER
TRANSISTORS

n TIP35B, TIP35C, TIP36B, AND TIP36C ARE
SGS-THOMSON PREFERRED
SALESTYPES

DESCRIPTION
The TIP35A, TIP35B and TIP35C are silicon
epitaxial-base NPN transistors in TO-218 plastic
3
package. They are intented for use in power 2
amplifier and switching applications. 1
The complementary PNP types are TIP36A,
TIP36B and TIP36C. TO-218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Unit
NPN T IP35A TIP35B T IP35C
PNP T IP36A TIP36B T IP36C
V CBO Collector-Base Voltage (I E = 0) 60 80 100 V
V CEO Collector-Emitter Voltage (IB = 0) 60 80 100 V
V EBO Emitter-Base Voltage (IC = 0) 5 V
IC Collector Current 25 A
I CM Collector Peak Current 50 A
IB Base Current 5 A
o
P tot T otal Dissipation at Tc ase 25 C 125 W
o
T s tg Storage T emperature -65 to 150 C
o
Tj Max. Operating Junction T emperature 150 C
For PNP types voltage and current values are negative.

October 1995 1/4
TIP35A/TIP35B/TIP35C/TIP36A/TIP36B/TIP36C

THERMAL DATA
o
R thj -ca se Thermal Resistance Junction-case Max 1 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
I CBO Collector Cut-off for TIP35A/36A
Current (I B = 0) V CE = 30 V 1 mA
for TIP35B/35C/36B/36C
V CB = 60 V 1 mA
I EBO Emitter Cut- off Current V EB = 5 V 1 mA
(I C = 0)
I CES Collector Cut-off V CE = Rated V CEO 0.7 mA
Current (V BE = 0)
V CEO(sus) * Collector-Emitter I C = 30 mA
Sustaining Voltage for T IP35A/36A 60 V
(I B = 0) for T IP35B/36B 80 V
for T IP35C/36C 100 V
h FE* DC Current Gain I C = 1.5 A V CE = 4 V 25
I C = 15 A V CE = 4 V 10 50
V CE(sat )* Collector-Emitter I C = 15 A IB = 1.5 A 1.8 V
Saturation Voltage I C = 25 A IB = 5 A 4
V BE(on) * Base-Emitter Voltage I C = 15 A V CE = 4 V 2 V
I C = 25 A V CE = 4 V 4 V
fT Transition Frequency IC = 1 A V CE = 10 V 3 MHz
f = 1 MHz
h fe Small Signal Current IC = 1 A V CE = 10 V 25
Gain f = 1 KHz
Pulsed: Pulse duration = 300