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TIP35A/35B/35C TIP36A/36B/36C COMPLEMENTARY SILICON HIGH POWER TRANSISTORS n TIP35B, TIP35C, TIP36B, AND TIP36C ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The TIP35A, TIP35B and TIP35C are silicon epitaxial-base NPN transistors in TO-218 plastic 3 package. They are intented for use in power 2 amplifier and switching applications. 1 The complementary PNP types are TIP36A, TIP36B and TIP36C. TO-218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Valu e Unit NPN T IP35A TIP35B T IP35C PNP T IP36A TIP36B T IP36C V CBO Collector-Base Voltage (I E = 0) 60 80 100 V V CEO Collector-Emitter Voltage (IB = 0) 60 80 100 V V EBO Emitter-Base Voltage (IC = 0) 5 V IC Collector Current 25 A I CM Collector Peak Current 50 A IB Base Current 5 A o P tot T otal Dissipation at Tc ase 25 C 125 W o T s tg Storage T emperature -65 to 150 C o Tj Max. Operating Junction T emperature 150 C For PNP types voltage and current values are negative. October 1995 1/4 TIP35A/TIP35B/TIP35C/TIP36A/TIP36B/TIP36C THERMAL DATA o R thj -ca se Thermal Resistance Junction-case Max 1 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbo l