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BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING TO-220
USE IN HORIZONTAL DEFLECTION
OUTPUT STAGE
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO 200 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 7 A 1.Base 2.Collector 3.Emitter
Collector Peck Current ICM 10 A
Base Current IB 4 A
Collector Dissipation ( T C=25 ) PC 60 W
Junction Temperature TJ 150
Storage Temperature T STG -55 ~150
ELECTRICAL CHARACTERISTICS (Tc =25)
Characteristic Symbol Test Conditions Min Max Unit
Collector Cutoff Current (VBE=0) ICES VCE = 400V, VBE = 0 5 mA
VCE = 250V, VBE = 0 100 uA
VCE = 250V, VBE = 0, T C = 150 1 mA
Emitter Cutoff Current (IC=0) IEBO VBE = 6V, IC = 0 1 mA
Collector Emitter Saturation Voltage
: BU406 VCE(sat) IC = 5A, IB = 0.5A 1 V
: BU406H IC = 5A, IB = 0.8A 1 V
: BU408 IC = 6A, IB = 1.2A 1 V
Base Emitter Saturation Voltage
: BU406 VBE(sat) IC = 5A, IB = 0.5A 1.2 V
: BU406H IC = 5A, IB = 0.5A 1.2 V
: BU408 IC = 6A, IB = 1.2A 1.5 V
Current Gain- Bandwidth Product fT VCE = 10V, IC = 0.5A 10 MHz
Turn-off Time : BU406 toff IC = 5A, IB = 0.5A 0.75 uS
: BU406H IC = 5A, IB = 0.8A 0.4 uS
: BU408 IC = 6A, IB = 1.2A 0.4 uS
BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR