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STP4NC80Z - STP4NC80ZFP
STB4NC80Z - STB4NC80Z-1
N-CHANNEL 800V - 2.4 - 4A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESHTMIII MOSFET
TYPE VDSS RDS(on) ID
STP4NC80Z/FP 800V < 2.8 4A
STB4NC80Z/-1 800V < 2.8 4A 3
1
s TYPICAL RDS(on) = 2.4 2
D PAK 3
2
s EXTREMELY HIGH dv/dt AND CAPABILITY 1
GATE-TO- SOURCE ZENER DIODES TO-220 TO-220FP
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
23
I2PAK 1
DESCRIPTION (Tabless TO-220)
The third generation of MESH OVERLAYTM Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP(B)4NC80Z(-1) STP4NC80ZFP
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 k) 800 V
VGS Gate- source Voltage