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ESM2012DV

NPN DARLINGTON POWER MODULE

s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION TO CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s ULTRAFAST FREEWHEELING DIODE
s ISOLATED CASE (2500V RMS)
s EASY TO MOUNT
s LOW INTERNAL PARASITIC INDUCTANCE

INDUSTRIAL APPLICATIONS:
s MOTOR CONTROL
s UPS

s DC/DC & DC/AC CONVERTERS

ISOTOP

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCEV Collector-Emitter Voltage (VBE = -5 V) 150 V
VCEO(sus) Collector-Emitter Voltage (IB = 0) 120 V
VEBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 120 A
ICM Collector Peak Current (t p = 10 ms) 180 A
IB Base Current 2 A
I BM Base Peak Current (t p = 10 ms) 4 A
Pt ot Tot al Dissipation at T c = 25 o C 175 W
o
T stg Storage Temperature -55 to 150 C
o
Tj Max. Ope rating Junction Temperature 150 C
o
VI SO Insulation Withstand Voltage (AC-RMS) 2500 C

September 1997 1/8
ESM2012DV

THERMAL DATA
o
R thj-ca se Thermal Resistance Junction-case (transistor) Max 0.7 C/W
o
R thj-ca se Thermal Resistance Junction-case (diode) Max 0.9 C/W
R t hc-h Thermal Resistance Case-heatsink With Conductive
o
Grease Applied Max 0.05 C/W

o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CER # Collecto r Cut-of f VCE = VCEV 1. 5 mA
Current (RBE = 5 ) VCE = VCEV T j = 100 o C 10 mA
I CEV # Collecto r Cut-of f VCE = VCEV 1 mA
Current (VBE = -5V) VCE = VCEV T j = 100 o C 7 mA
I EBO # Emitter Cut-off Current VEB = 5 V 1 mA
(I C = 0)
VCEO(SUS) * Collecto r-Emitter IC = 5 A L = 15 mH 125 V
Sustaining Voltage Vc lamp = 125 V
hFE DC Current Gain I C = 100 A VCE = 5 V 1200
V CE(sat ) Collecto r-Emitter IC = 70 A IB = 0.25 A 1.25 V
Saturation Voltage IC = 70 A IB = 0.25 A Tj = 100 o C 1.35 1. 5 V
IC = 100 A IB = 1A 1.5 V
IC = 100 A IB = 1 A T j = 100 oC 1.65 2 V
VBE( sat) Base-Emitter I C = 100 A IB = 1 A 2.3 V
Saturation Voltage I C = 100 A IB = 1 A T j = 100 oC 2.35 3 V
diC /dt Rate of Rise of VCC = 90 V RC = 0 tp = 3