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MJD50
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s HIGH VOLTAGE CAPABILITY
s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
s ELECTRICAL SIMILAR TO TIP50
APPLICATIONS 3
s SWITCH MODE POWER SUPPLIES 1
s AUDIO AMPLIFIERS
s GENERAL PURPOSE SWITCHING AND
DPAK
AMPLIFIER
TO-252
DESCRIPTION (Suffix "T4")
The MJD50 is manufactured using Medium
Voltage Epitaxial Planar technology, resulting in a
rugged high performance cost-effective transistor.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V CBO Collector-Base Voltage (IE = 0) 500 V
V CEO Collector-Emitter Voltage (I B = 0) 400 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 1 A
I CM Collector Peak Current (tp < 5 ms) 2 A
IB Base Current 0.6 A
I BM Base Peak Current (t p < 5 ms) 1.2 A
P t ot Total Dissipation at T c = 25 o C 15 W
o
T stg St orage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
July 1997 1/6
MJD50
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 8.33 C/W
o
R t hj- amb Thermal Resistance Junction-ambient Max 100 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 500 V 0.1 mA
Current (V BE = 0)
I CEO Collector Cut-off V CE = 300 V 0.1 mA
Current (IB = 0)
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 30 mA 400 V
Sustaining Voltage
V CE(sat ) Collector-Emitter IC = 1 A IB = 0.2 A 1 V
Saturation Voltage
V BE(on) Base-Emitter O n IC = 1 A VCE = 10 V 1.5 V
Voltage
hFE DC Current G ain I C = 0.3 A VCE = 10 V 30 150
IC = 1 A V CE = 10 V 10
fT Transition F requency I C = 0.2 A VCE = 10 V f=2MHz 10 MHz
hf e Small Signal Current I C = 0.2 A VCE = 10 V f=1kHz 25
Gain
Pulsed: Pulse duration = 300