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M8050LT1
NPN General Purpose Transistors 3
P b Lead(Pb)-Free 1
2
SOT-23
Value
V CEO 25
40
5.0
800
300
2.4
417
0.1 25
100 40
100 5.0
35 0.15 u
4.0 0.15 u
WEITRON 1/4 15-Jul-10
http://www.weitron.com.tw
M8050LT1
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max UnitM
ON CHARACTERISTICS
DC Current Gain
(IC=100 mAdc, VCE=1.0 Vdc) hFE (1) 100 600 -
0.5
Collector-Emitter Saturation Voltage
VCE(sat) - Vdc
(IC=800 mAdc, IB=80mAdc)
CLASSIFICATION OF hFE(1)
Rank P Q R S
Range 100-200 150-300 200-400 300-600
Marking 80P 1YC 1YE 80S
WEITRON
2/4 15-Jul-10
http://www.weitron.com.tw
M8050LT1
1000 1
VCE=1V
Saturation Voltage (V)
100
hFE
0.1
10
VCE(sat) @ IC=10IB
1 0.01
0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000
Collector Current (mA) Collector Current (mA)
FIG.1 - Current Gain & Collector Current FIG.2 - Saturation Voltage & Collector Current
1 1000
VCE=10V
Cutoff Frequency (MHz)
VBE(ON) @ VCE=1V
100
On Voltage (V)
10
0.1 1
0.01 0.1 1 10 100 1000 1 10 100 1000
Collector Current (mA) Collector Current (mA)
FIG.3 - On Voltage & Collector Current FIG.4 - Cutoff Frequency & Collector Current
100
Capacitance (pF)
10 Cob
1
0.1 1 10 100
Reverse-Biased Voltage (V)
FIG.5 - Capacitance & Reverse-Biased Voltage
WEITRON
http://www.weitron.com.tw
3/4 15-Jul-10
M8050LT1
SOT-23 Outline Dimension
SOT-23
A Dim Min Max
A 0.35 0.51
B 1.19 1.40
TOP VIEW B C C 2.10 3.00
D 0.85 1.05
D E 0.46 1.00
E
G G 1.70 2.10
H H 2.70 3.10
J 0.01 0.13
K K 0.89 1.10
L 0.30 0.61
L
J M M 0.076 0.25
WEITRON
4/4 15-Jul-10
http://www.weitron.com.tw