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BSS123
Power MOSFET
N-Channel 3 DRAIN
SOT-23
Features: 1 3
*Low On-Resistance : 6.0 GATE 1
*Low Input Capacitance: 20PF 2
*Low Out put Capacitance : 9PF 2
*Low Threshole :2.8V SOURCE
*Fast Switching Speed : 20ns
Application:
* DC to DC Converter
* Cellular & PCMCIA Card
* Cordless Telephone
* Power Management in Portable and Battery etc.
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Symbol Value Unit
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGS _
+20 V
Continuous Drain Current (TA=25 C) ID 170 mA
Pulsed Drain Current (1) IDM 680 mA
Power Dissipation (TA=25 C)(2) PD 225 mW
Maximax Junction-to-Ambient R JA 556 C/W
Operating Junction and Storage C
TJ, Tstg -55 to 150
Temperature Range
Device Marking
BSS123=SA
WEITRON
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BSS123
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Static (1)
Drain-Source Breakdown Voltage V(BR)DSS 100 - - V
VGS=0V, ID=250 uA
Gate-Threshold Voltage VGS (th) 0.8
VDS=VGS , ID=1.0 mA - 2.8 V
Gate-body Leakage Current IGSS - - 50 nA
VGS= 20V, VDS=0V
Zero Gate Voltage Drain Current
VDS=0V, VGS=100V, Tj=25 C IDSS - - 15 uA
VDS=0V, VGS=100V, Tj=125 C - - 60
Static Drain-to-Source On-Resistance
VGS=10V, ID=0.1A rDS (on) - 5.0 6.0
Forward Trans Conductance
g fs 8.0 - - ms
VDS=25V, ID=100 mA
Dynamic Characteristics
Input Capacitance Ciss 20
VDS=25V, VGS=0, f=1.0 MHz - -
Output Capacitance - -
Coss 9.0 PF
VDS=25V, VGS=0, f=1.0 MHz
Transfer Capacitance
Crss - 4.0 -
VDG=25V, VGS=0, f=1.0 MHz
Switching Characteristics(1)
Turn-On Delay Time td(on) - 20 -
(VCC =30V, IC =0.28A,
nS
Turn-Off Delay Time VGS=10V, R GS =50 ) td(off ) - 40 -
Reverse Diode
Diode Forward On-Voltage
VSD - - 1.3 V
I D =0.34A, V GS =0V
Note:
1. Pulse Test: Pulse Width < 300us, Duty Cycle < 2%.
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2. RF-5=1.0 0.75 0.062m.
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WEITRON
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BSS123
2.0 1.0
1.8 Ta =25 C VGS=10V
-55 C 25 C
1.6 VGS=10V 0.8
I D ,DRIAN CURRENT(A)
I D ,DRIAN CURRENT(A)
125 C
1.4 9V
1.2 8V 0.6
1.0
7V
0.8 0.4
0.6 6V
0.4 5V
0.2
0.2 4V
3V
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
VDS ,DRAIN SOURCE VOLTAGE(V) VGS ,GATE SOURCE VOLTAGE(V)
FIG.1 Ohmic Region FIG.2 Transfer Characteristics
VGS(th) ,THRESHOLD VOLTAGE (NORMZLIZED)
IDS(on) ,STATIC DRAIN-SOURCE ON-RESISTANCE
2.4 1.2
2.2 1.05
VGS=10V VDS=VGS
2.0 1.1 ID =1.0mA
ID =200mA
1.8 1.10
(NORMALIZED)
1.6 1.0
1.4 0.95
1.2 0.9
1.0 0.85
0.8 0.8
0.6 0.75
0.4 0.7
- 60 - 20 + 20 + 60 + 100 + 140 - 60 - 20 + 20 + 60 + 100 + 140
T ,TEMPERATURE( C) T ,TEMPERATURE( C)
FIG.3 Temperature Versus Static FIG.4 Temperature Versus Gate
Drain-Source On-Resistance Threshold Voltage
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