am82223.pdf part of ST am82223 am82223.pdf, . Electronic Components Datasheets Active components Transistors ST am82223.pdf text manual preview

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AM82223-010
RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS

.
. REFRACTORY/GOLD METALLIZATION

. EMITTER SITE BALLASTED
:1 VSWR CAPABILITY AT RATED
.
.
CONDITIONS
LOW THERMAL RESISTANCE

.
.
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY .400 x .400 2NLFL (S042)

. METAL/CERAMIC HERMETIC PACKAGE
POUT = 9 W MIN. WITH 6.5 dB GAIN ORDER CODE
hermetically sealed

AM82223-010
BRANDING
82223-10

DESCRIPTION
The AM82223-010 is a common base, silicon PIN CONNECTION
NPN bipolar transistor designed for high gain
and efficiency in the 2.2 - 2.3 GHz frequency
range.
Suitable for hi-rel aerospace telemetry applica-
tions, the AM82223-010 is provided in the indus-
try-standard AMPACTM metal/ceramic hermetic
package and incorporates internal input and out-
put impedance matching structures along with a
rugged, emitter-site ballasted overlay die geome-
try.
AM82223-010 is capable of withstanding :1 1. Collector 3. Emitter
load mismatch at any phase angle under full
2. Base 4. Base
rated operating conditions.

ABSOLUTE MAXIMUM RATINGS (T case = 25