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Si4800BDY
New Product Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W) ID (A)
0.0185 @ VGS = 10 V 9
30
0.030 @ VGS = 4.5 V 7
D
SO-8
S 1 8 D
S 2 7 D
G
S 3 6 D
G 4 5 D
Top View S
Ordering Information: Si4800BDY N-Channel MOSFET
Si4800BDY-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
V
Gate-Source Voltage VGS "20
TA = 25_C 9 6.5
Continuous Drain Current (TJ = 150_C)a, b ID
TA = 70_C 7.0 5.0
A
Pulsed Drain Current (10 ms Pulse Width) IDM 40
Continuous Source Current (Diode Conduction)a, b IS 2.3
TA = 25_C 2.5 1.3
Maximum Power Dissipationa, b PD W
TA = 70_C 1.6 0.8
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 _C
THERMAL RESISTANCE RATINGS
Limits
Parameter Symbol Typ Max Unit
t v 10 sec 40 50
Junction-to-Ambienta
Maximum J
M i ti t A bi t RthJA
Steady-State 70 95 _C/W
C/W
Maximum Junction-to-Foot (Drain) Steady-State RthJF 24 30
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 72124 www.vishay.com
S-31062--Rev. B, 26-May-03 1
Si4800BDY
Vishay Siliconix New Product
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 1.8 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA
VDS = 24 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS mA
VDS = 24 V, VGS = 0 V, TJ = 55_C 5
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 30 A
VGS = 10 V, ID = 9 A 0.0155 0.0185
Drain-Source On-State Resistancea rDS(on) W
VGS = 4.5 V, ID = 7 A 0.023 0.030
Forward Transconductancea gfs VDS = 15 V, ID = 9 A 16 S
Diode Forward Voltagea VSD IS = 2.3 A, VGS = 0 V 0.75 1.2 V
Dynamicb
Total Gate Charge Qg 8.7 13
Gate-Source Charge Qgs VDS = 15 V, VGS = 5.0 V, ID = 9 A 1.5 nC
Gate-Drain Charge Qgd 3.5
Gate Resistance RG 0.5 1.2 2.0 W
Turn-On Delay Time td(on) 7 15
Rise Time tr 12 20
VDD = 15 V, RL = 15 W
Turn-Off Delay Time td(off) ID ^ 1 A, VGEN = 10 V, RG = 6 W 32 50 ns
Fall Time tf 14 25
Source-Drain Reverse Recovery Time trr IF = 2.3 A, di/dt = 100 A/ms 30 60
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com Document Number: 72124
2 S-31062--Rev. B, 26-May-03
Si4800BDY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics Transfer Characteristics
40 40
VGS = 10 thru 5 V 4V
TC = - 55_C
35 35
25_C
30 30
I D - Drain Current (A)
I D - Drain Current (A)
25 25
125_C
20 20
3V
15 15
10 10
5 5
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.040 1200
r DS(on) - On-Resistance ( W )
1000
0.032
C - Capacitance (pF)
Ciss
VGS = 4.5 V 800
0.024
VGS = 10 V 600
0.016
400
Coss
0.008
200
Crss
0.000 0
0 5 10 15 20 25 30 0 4 8 12 16 20
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
6 1.8
VDS = 15 V VGS = 10 V
V GS - Gate-to-Source Voltage (V)
ID = 9 A ID = 9 A
5 1.6
r DS(on) - On-Resistance (W)
(Normalized)
4 1.4
3 1.2
2 1.0
1 0.8
0 0.6
0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C)
Document Number: 72124 www.vishay.com
S-31062--Rev. B, 26-May-03 3
Si4800BDY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
50 0.06
0.05
r DS(on) - On-Resistance ( W )
I S - Source Current (A)
TJ = 150_C 0.04
10 ID = 9 A
0.03
0.02
0.01
TJ = 25_C
1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 150
0.2 120
ID = 250 mA
V GS(th) Variance (V)
- 0.0
90
Power (W)
- 0.2
60
- 0.4
30
- 0.6
- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 10 -3 10 -2 10 -1 1 10
TJ - Temperature (_C) Time (sec)
Safe Operating Area, Junction-to-Foot
100
Limited
by rDS(on)
10
I D - Drain Current (A)
1 ms
1
10 ms
100 ms
1s
0.1
TC = 25_C 10 s
Single Pulse
dc
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
www.vishay.com Document Number: 72124
4 S-31062--Rev. B, 26-May-03
Si4800BDY
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Duty Cycle = 0.5
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (sec)
Document Number: 72124 www.vishay.com
S-31062--Rev. B, 26-May-03 5
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