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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D124
BFG21W
UHF power transistor
Product specification 1998 Jul 06
Supersedes data of 1997 Nov 21
NXP Semiconductors Product specification
UHF power transistor BFG21W
FEATURES PINNING
High power gain PIN DESCRIPTION
High efficiency 1, 3 emitter
1.9 GHz operating area 2 base
Linear and non-linear operation. 4 collector
APPLICATIONS
Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc. handbook, halfpage 3 4
Driver for DCS1800, 1900.
DESCRIPTION
2 1
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications Top view MSB842
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package. Marking code: P1.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
RF performance at Ts 60 C in a common emitter test circuit.
f VCE PL Gp C
MODE OF OPERATION
(GHz) (V) (dBm) (dB) (%)
Pulsed class-AB; < 1 : 2; tp = 5 ms 1.9 3.6 26 10 typ.55
1998 Jul 06 2
NXP Semiconductors Product specification
UHF power transistor BFG21W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 15 V
VCEO collector-emitter voltage open base 4.5 V
VEBO emitter-base voltage open collector 1 V
IC collector current (DC) 500 mA
Ptot total power dissipation Ts 60 C; note 1 600 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-s thermal resistance from junction to Ts 60 C; Ptot = 600 mW; note 1 150 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the emitter pins.
MGM219
103
handbook, full pagewidth
Rth
(K/W)
=
1
102 0.75
0.5
0.33
0.2
0.1
10 0.05 tp
P =
T
0.02
0.01
0 tp t
T
1
10-6 10-5 10-4 10-3 10-2 10-1 1
tp (s)
At temperature stabilization solder point has been reached.
Fig.2 Transient thermal resistance as a function of pulse time; typical values.
1998 Jul 06 3
NXP Semiconductors Product specification
UHF power transistor BFG21W
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA 15 V
V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 4.5 V
V(BR)CER collector-emitter breakdown voltage RBE < 1 k, IC = 10 mA 10 V
V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 1 V
ICES collector leakage current VCE = 5 V; VBE = 0 10 A
hFE DC current gain IC = 200 mA; VCE = 2 V 40 100
Cc collector capacitance IE = ie= 0; VCB = 3 V; f = 1 MHz 3 pF
Cre feedback capacitance IC = 0; VCB = 3.6 V; f = 1 MHz 1.5 pF
fT transition frequency IC = 200 mA; VCE = 3.6 V; 18 GHz
f = 700 MHz
APPLICATION INFORMATION
RF performance at Ts 60 C in a common emitter test circuit (see Figs 4 and 5).
f VCE ICQ PL Gp C
MODE OF OPERATION
(GHz) (V) (mA) (dBm) (dB) (%)
Pulsed; class-AB; < 1 : 2; tp = 5 ms 1.9 3.6 1 26 10 typ. 55
Ruggedness in class-AB operation
The transistor is capable of withstanding a load mismatch
corresponding to VSWR = 6 : 1 through all phases at 16
MGM220
80
26 dBm output power under pulsed conditions: = 1 : 2; handbook, halfpage
Gp C
tp = 5 ms; f = 1.9 GHz at VCE = 4.5 V. (%)
(dB) Gp
12 60
8 40
C
4 20
0 0
5 10 15 20 25 30
PL (dBm)
Pulsed, class-AB operation; < 1 : 2; tp = 5 ms.
f = 1.9 GHz; VCE = 3.6 V; ICQ = 1 mA; tuned at PL = 26 dBm.
Fig.3 Power gain and collector efficiency as a
function of the load power; typical values.
1998 Jul 06 4
NXP Semiconductors Product specification
UHF power transistor BFG21W
handbook, full pagewidth VC VS
R1
L5
R2
R3 C7
TR1 C6
C3
L4
L1 L3 C5
RF output
L2 50
RF input C1
50 DUT
C2 C4
MGM221
Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz.
List of components used in test circuit (see Figs 4 and 5)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.
C1, C5 multilayer ceramic chip capacitor; note 1 24 pF
C2 multilayer ceramic chip capacitor; note 1 3.3 pF
C3, C6 multilayer ceramic chip capacitor, note 1 15 pF
C4 multilayer ceramic chip capacitor; note 1 2.4 pF
C7 multilayer ceramic chip capacitor; note 1 1 nF
L1, L4 stripline; note 2 100 18 0.2 mm
L2 stripline; note 2 50 3.2 0.8 mm
L3 stripline; note 2 50 4.6 0.8 mm
L5 Grade 4S2 Ferroxcube chip bead 4330 030 36300
R1 metal film resistor 220 ; 0.4 W
R2, R3 metal film resistor 10 ; 0.4 W
TR1 NPN transistor BC817 9335 895 20215
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (r = 6.15,
tan = 0.0019); thickness 0.64 mm, copper cladding = 35 m.
1998 Jul 06 5
NXP Semiconductors Product specification
UHF power transistor BFG21W
handbook, full pagewidth 45
35
VC VS
TR1 R1
R2 L5
R3 C7
C3 C6
L1 L4
C2
C1 C5
L2
L3
DUT C4
input output
MGM222
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.5 Printed-circuit board and component lay-out for 1.9 GHz class-AB test-circuit in Fig.4.
1998 Jul 06 6
NXP Semiconductors Product specification
UHF power transistor BFG21W
MGM223 MGM224
10 16
handbook, halfpage handbook, halfpage
Z
Zi L
() RL
()
ri 12
8
8
6
4
xi
4
0
XL
2
-4
0 -8
1.8 1.85 1.9 1.95 2.0 1.8 1.85 1.9 1.95 2.0
f (GHz) f (GHz)
VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts 60 C. VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts 60 C.
Fig.6 Input impedance as function of frequency Fig.7 Load impedance as a function of frequency
(series components); typical values. (series components); typical values.
1998 Jul 06 7
NXP Semiconductors Product specification
UHF power transistor BFG21W
PACKAGE OUTLINE
Plastic surface-mounted package; reverse pinning; 4 leads SOT343R
D B E A X
y HE v M A
e
3 4
Q
A
A1
c
2 1
w M B bp b1 Lp
e1
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
A1
UNIT A bp b1 c D E e e1 HE Lp Q v w y
max
1.1 0.4 0.7 0.25 2.2 1.35 2.2 0.45 0.23
mm 0.1 1.3 1.15 0.2 0.2 0.1
0.8 0.3 0.5 0.10 1.8 1.15 2.0 0.15 0.13
OUTLINE REFERENCES EUROPEAN
ISSUE DATE
VERSION IEC JEDEC EIAJ PROJECTION
97-05-21
SOT343R
06-03-16
1998 Jul 06 8
NXP Semiconductors Product specification
UHF power transistor BFG21W
DATA SHEET STATUS
DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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1998 Jul 06 9
NXP Semiconductors Product specification
UHF power transistor BFG21W
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qualified products in automotive equipment or
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1998 Jul 06 10
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