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Guilin Strong Micro-Electronics Co.,Ltd.
GM2302
SOT-23 (SOT-23 Field Effect Transistors)
N-Channel Enhancement-Mode MOS FETs
N MOS
MAXIMUM RATINGS
Characteristic Symbol Max Unit
Drain-Source Voltage
BVDSS 20 V
-
Gate- Source Voltage
VGS +10 V
-
Drain Current (continuous)
ID 3.5 A
-
Drain Current (pulsed)
IDM 11 A
-
Total Device Dissipation
PD 1000 mW
TA=25 25
Junction TJ 150
Storage Temperature Tstg -55to+150
DEVICE MARKING
GM2302=A2
GM2302
2302=
Guilin Strong Micro-Electronics Co.,Ltd.
GM2302
ELECTRICAL CHARACTERISTICS
(TA=25 unless otherwise noted 25)
Characteristic Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage
BVDSS 20 -- -- V
-(ID = 250uA ,VGS=0V)
Gate Threshold Voltage
VGS(th) 0.5 -- 1.5 V
(ID = 250uA ,VGS= VDS)
Diode Forward Voltage Drop
VSD -- -- 1.5 V
(IS= 0.75A ,VGS=0V)
Zero Gate Voltage Drain Current
(VGS=0V, VDS= 16V) IDSS -- -- 1 uA
(VGS=0V, VDS= 16V, TA=55) 10
Gate Body Leakage
IGSS -- -- +100 nA
(VGS=+10V, VDS=0V)
Static Drain-Source On-State Resistance
(ID=2.8A ,VGS=4.5V) RDS(ON) -- -- 60 m
(ID=2A ,VGS=2.5V) 80
Input Capacitance
CISS -- -- 800 pF
(VGS=0V, VDS= 10V,f=1MHz)
Common Source Output Capacitance
COSS -- -- 200 pF
(VGS=0V, VDS= 10V,f=1MHz)
Turn-ON Time
t(on) -- -- 20 ns
(VDS= 10V, ID= 3.5A, RGEN=10)
Turn-OFF Time
t(off) -- -- 80 ns
(VDS= 10V, ID= 3.5A, RGEN=10)
Pulse Width<300s; Duty Cycle<2.0%
Guilin Strong Micro-Electronics Co.,Ltd.
GM2302
DIMENSION