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BF1210
Dual N-channel dual gate MOSFET
Rev. 01 -- 25 October 2006 Product data sheet

1. Product profile

1.1 General description
The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source
and gate2 leads.

The source and substrate are interconnected. Internal bias circuits enable
DC stabilization and a very good cross modulation performance during AGC. Integrated
diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features
I Two low noise gain controlled amplifiers in a single package; both with a partly
integrated bias
I Superior cross modulation performance during AGC
I High forward transfer admittance
I High forward transfer admittance to input capacitance ratio

1.3 Applications
I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply
voltage
N digital and analog television tuners
N professional communication equipment
NXP Semiconductors BF1210
Dual N-channel dual gate MOSFET

1.4 Quick reference data
Table 1. Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 6 V
ID drain current DC - - 30 mA
Ptot total power dissipation Tsp 107