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MJE3055(NPN)
TO-220 Transistor
TO-220
1. BASE
2. COLLECTOTR
3. EMITTER
3
2
1
Features
GENERAL PURPOSE AND SWITCHING APPLICATIONS.
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 70 V Dimensions in inches and (millimeters)
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 10 A
PC Collector Power Dissipation 2 W
Tj Junction Temperature 150
Tstg Storage Temperature Range -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 70 V
Collector-emitter breakdown voltage V(BR)CEO IC=200mA, IB=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA, IC=0 5 V
Collector cut-off current ICBO VCB=70V, IE=0 1 mA
Emitter cut-off current IEBO VEB=5V, IC=0 5 mA
hFE(1) * VCE=4V, IC=4A 20 100
DC current gain
hFE(2) * VCE=4V, IC=10A 5
VCE(sat) * IC=4A, IB=0.4A 1.1 V
Collector-emitter saturation voltage
VCE(sat) * IC=10A, IB=3.3A 8 V
Base-emitter voltage VBE* VCE=4V, IC=4A 1.8 V
Transition frequency fT VCE=10V, IC=0.5A 2 MHz
Note:*Pulse test: tp300S, 0.02.
MJE3055(NPN)
TO-220 Transistor
Typical Characteristics