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SEMICONDUCTOR KMB6D0DN35QA
TECHNICAL DATA Dual N-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for DC/DC Converters. H
T
D P G L
FEATURES
VDSS=35V, ID=6A. A
DIM MILLIMETERS
Drain-Source ON Resistance. A _
4.85 + 0.2
B1 _
3.94 + 0.2
RDS(ON)=28m (Max.) @VGS=10V B2 _
8 5 6.02 + 0.3
RDS(ON)=42m (Max.) @VGS=4.5V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
Super High Dense Cell Design H _
1.63 + 0.2
Very fast switching 1 4 L _
0.65 + 0.2
P 1.27
T 0.20+0.1/-0.05
MAXIMUM RATING (Ta=25 Unless otherwise noted)
FLP-8
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage VDSS 35V V
Gate Source Voltage VGSS 20 V Marking
Type Name
DC ID * 6 A
Drain Current
Pulsed IDP 20 A
IS KMB6D0DN
Drain Source Diode Forward Current 1.3 A
35QA
25 2 W Lot No.
Drain Power Dissipation PD * 721
100 1.6 W
Maximum Junction Temperature Tj -50~150
Storage Temperature Range Tstg -50~150
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W
* : Surface Mounted on FR4 Board
PIN CONNECTION (TOP VIEW)
S1 1 8 D1 1 8
G1 2 7 D1 2 7
S2 3 6 D2 3 6
G2 4 5 D2 4 5
2007. 8. 13 Revision No : 1 1/5
KMB6D0DN35QA
ELECTRICAL CHARACTERISTICS (Ta=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 35 - - V
Drain Cut-off Current IDSS VDS=24V, VGS=0V - - 1 A
Gate Leakage Current IGSS VGS= 25V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth* VDS=VGS, ID=250 A 1.0 2.0 3.0 V
VGS=10.0V, ID=6A - 24 28
Drain-Source ON Resistance RDS(ON)* m
VGS=4.5V, ID=4.9A - 35 42
On-State Drain Current ID(ON)* VDS=5V, VGS=10V 20 - - A
Forward Transconductance gfs* VDS=10V, ID=6A - 20 - S
Dynamic
Input Capacitance Ciss - 740 -
Ouput Capacitance Coss VDS=15V, f=1MHz, VGS=0V - 170 - pF
Reverse Transfer Capacitance Crss - 75 -
Total Gate Charge Qg* - 7.0 10.0
Gate-Source Charge Qgs* VDS=10V, VGS=5V, ID=6A - 3.8 - nC
Gate-Drain Charge Qgd* - 2.5 -
Turn-On Delay Time td(on)* - 8 16
Turn-On Rise Time tr* VDD=15V, VGS=10V - 13 24
ns
Turn-Off Delay Time td(off)* ID=1A, RG=6 (Note 1) - 18 29
Turn-Off Fall Time tf* - 8 6
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF IDR=1.7A, VGS=0V - 0.75 1.2 V
Note>*Pulse Test : Pulse width 300 , Duty cycle 2%
2007. 8. 13 Revision No : 1 2/5
KMB6D0DN35QA
Fig1. ID - VDS Fig2. RDS(on) - ID
Drain Source On Resistance RDS(ON) ()
20 0.16
VGS=4.5 Common Source
VGS=10
Common Source 0.14 Tc= 25 C
Pulse Test
16 Tc= 25 C
Drain Current ID (A)
VGS=5 Pulse Test 0.12
12 0.1
VGS=4.0
0.08
VGS=4.5
8 0.06
0.04
4 VGS=3.5
0.02 VGS=10.0
VGS=3.0
0 0
0 2 4 6 8 10 0 5 10 15 20
Drain - Source Voltage VDS (V) Drain Current ID (A)
Fig3. ID - VGS Fig4. RDS(on) - Tj
20 50
Common Source Common Source
VDS=5V VDS=10V
Drain Source On Resistance
Pulse Test Pulse Test
40
Drain Current ID (A)
15
RDS(ON) (m)
30
10
20
125 C 25 C
5
-55 C 10
0 0
1 2 3 4 5 -80 -40 0 40 80 120 160
Gate - Source Voltage VGS (V) Junction Temperature Tj ( C )
Fig5. Vth - Tj Fig6. IDR - VSDF
5 Common Source 10
Common Source
Gate Threshold Voltage Vth (V)
Reverse Drain Current IDR (A)
VGS=VDS Tc= 25 C
ID=250