stb8ns25.pdf part of ST stb8ns25 stb8ns25.pdf, . Electronic Components Datasheets Active components Transistors ST stb8ns25.pdf text manual preview

Text preview for : stb8ns25.pdf part of ST stb8ns25 . Electronic Components Datasheets Active components Transistors ST stb8ns25.pdf

Back to : stb8ns25.pdf | Home

STB8NS25
N-CHANNEL 250V - 0.38 - 8A D2PAK
MESH OVERLAYTM MOSFET

TYPE VDSS RDS(on) ID

STB8NS25 250 V < 0.45 8A
s TYPICAL RDS(on) = 0.38
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
3
1
DESCRIPTION
Using the latest high voltage MESH OVERLAYTM D2PAK
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company's proprietary edge termina-
tion structure, makes it suitable in coverters for INTERNAL SCHEMATIC DIAGRAM
lighting applications.

APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 250 V
VDGR Drain-gate Voltage (RGS = 20 k) 250 V
VGS Gate- source Voltage