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STD5NM50
STD5NM50-1
N-CHANNEL 500V - 0.7 - 7.5A DPAK/IPAK
MDmeshTMPower MOSFET
TYPE VDSS RDS(on) ID
STD5NM50 500V <0.8 7.5 A
STD5NM50-1 500V <0.8 7.5 A
n TYPICAL RDS(on) = 0.7
n HIGH dv/dt AND AVALANCHE CAPABILITIES 3 3
100% AVALANCHE TESTED 2
n 1 1
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE DPAK IPAK
n TIGHT PROCESS CONTROL AND HIGH TO-252 TO-251
MANUFACTURING YIELDS (Add Suffix "-1")
DESCRIPTION
The MDmeshTM is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizontal INTERNAL SCHEMATIC DIAGRAM
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company's proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition's products.
APPLICATIONS
The MDmeshTM family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 500 V
VDGR Drain-gate Voltage (RGS = 20 k) 500 V
VGS Gate- source Voltage