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2N3055
SILICON NPN TRANSISTOR
n SGS-THOMSON PREFERRED SALESTYPE
DESCRIPTION
The 2N3055 is a silicon epitaxial-base NPN
transistor in Jedec TO-3 metal case. It is intended
for power switching circuits, series and shunt
regulators, output stages and high fidelity
amplifiers.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Unit
V CBO Collector-Base Voltage (IE = 0) 100 V
V CER Collector-Emitter Voltage (RBE = 100) 70 V
V CEO Collector-Emitter Voltage (I B = 0) 60 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 15 A
IB Base Current 7 A
o
P tot T otal Dissipation at T c 25 C 115 W
o
T s tg Storage Temperature -65 to 200 C
o
Tj Max. O perating Junction Temperature 200 C
October 1995 1/4
2N3055
THERMAL DATA
o
R thj -ca se Thermal Resistance Junction-case Max 1.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
I CEV Collector Cut-off V CE = 100 V 1 mA
Current (V BE = -1.5V) V CE = 100 V T j = 150 o C 5 mA
I CEO Collector Cut-off V CE = 30 V 0.7 mA
Current (I B = 0)
I EBO Emitter Cut- off Current V EB = 7 V 5 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 200 mA 60 V
Sustaining Voltage
V CER(sus ) Collector-Emitter I C = 200 mA R BE = 100 70 V
Sustaining Voltage
V CE(sat) Collector-Emitter IC = 4 A IB = 400 mA 1 V
Saturation Voltage I C = 10 A IB = 3.3 A 3 V
V BE Base-Emitter Voltage IC = 4 A V CE = 4 V 1.5 V
h FE DC Current Gain IC = 0.5 A VCE = 4 V Gr oup 4 20 50
IC = 0.5 A VCE = 4 V Gr oup 5 35 75
IC = 0.5 A VCE = 4 V Gr oup 6 60 145
IC = 0.5 A VCE = 4 V Gr oup 7 120 250
IC = 4 A V CE = 4 V 20 70
IC = 10 A VCE = 4 V 5
h FE1 /hFE1 DC Current Gain I C = 0.5 A VCE = 4 V 1.6
fT Transition frequency IC = 1 A V CE = 4 V 2.5 MHz
I s /b Second Breakdown V CE = 40 V 2.87 A
Collector Current
Pulsed: Pulse duration = 300