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CEH2609
Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

20V, 3.5A, RDS(ON) = 60m @VGS = 4.5V.
RDS(ON) = 80m @VGS = 2.5V.
-20V, -2.5A, RDS(ON) = 100m @VGS = -4.5V.
RDS(ON) = 145m @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).

High power and current handing capability. D1(6) D2(4)

Lead free product is acquired.
4
Surface mount Package. 5
6 G1(1) G2(3)

3
2
1 S1(5) S2(2)

TSOP-6

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol N-Channel P-Channel Units
Drain-Source Voltage VDS 20 -20 V
Gate-Source Voltage VGS