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BC237/238/239(NPN)
TO-92 Bipolar Transistors

1. COLLECTOR
TO-92
2. BASE

3. EMITTER

Features

Amplifier dissipation NPN Silicon

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter Value Units
Collector-Emitter Voltage BC237 45 Dimensions in inches and (millimeters)
VCEO V
BC238/239 25
Emitter-Base Voltage BC237 6
VEBO V
BC238/239 5
IC Collector Current -Continuous 0.1 A
PC Collector Power Dissipation 350 mW
Thermal Resistance,
RJA 357 /W
Junction to Ambient
RJC Thermal Resistance, Junction to Case 125 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
BC237/238/239(NPN)
TO-92 Bipolar Transistors

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

IC=100A, IE=0 BC237 50
Collector-base breakdown voltage V(BR)CBO V
BC238/239 30
IC=2mA, IB=0 BC237 45
Collector-emitter breakdown voltage V(BR)CEO V
BC238/239 25
IE=100A, IC=0 BC237 6
Emitter-base breakdown voltage V(BR)EBO V
BC238/239 5
VCE=50V, VBE=0 BC237
Collector cut-off current ICBO 15 nA
VCB=30V,IE=0 BC238/239
VCE=5V, IC=10A BC237A 90
hFE(1) BC237B/238B 150
BC237C/238C/239C 270
VCE=5V, IC=2mA BC237 120 800
BC239 120 800
DC current gain hFE(2) BC237A 120 220
BC237B/238B 200 460
BC237C/238C/239C 380 800
VCE=5V, IC=100mA BC237A 120
hFE(3) BC237B/238B 180
BC237C/238C/239C 300
IC=10mA, IB=0.5mA BC237/238/239 0.2
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=5mA BC237/239 0.6 V
BC238 0.8
IC=10mA,IB=0.5mA 0.83
Base-emitter saturation voltage VBE(sat) V
IC=100mA,IB=5mA 1.05
VCE=5V, IC=0.1mA 0.5
Base-emitter voltage VBE VCE=5V, IC=2mA 0.55 0.7 V
VCE=5V, IC=100mA 0.83
VCE=3V,IC=0.5mA,f=100MHz BC237 100
BC238 120
BC239 140
Transition frequency fT MHz
VCE=5V,IC=10mA,f=100MHz BC237 150 200
BC238 150 240
BC239 150 280

Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 4.5 pF

Emitter-base capacitance Cib VEB=0.5V, IC=0, f=1MHz 8 Pf

VCE=5V, Ic=0.2mA,
f=1kHZ, Rs=2K BC239 2 4
VCE=5V, Ic=0.2mA,
Noise figure NF dB
f=1kHZ, Rs=2K, f=200Hz BC237 2 10
BC238 2 10
BC239 2 4
BC237/238/239(NPN)
TO-92 Bipolar Transistors

Typical Characteristics