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STW8NB80
N - CHANNEL 800V - 1.2 - 7.5A - TO-247
PowerMESHTM MOSFET
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
STW8NB80 800 V < 1.6 7.5 A
s TYPICAL RDS(on) = 1.2
(s)
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
ct
du )
s GATE CHARGE MINIMIZED
ro
3
DESCRIPTION 2
t(s
1
P
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an
te
advanced family of power MOSFETs with
le uc TO-247
od
outstanding performances. The new patent
o
bs e Pr
pending strip layout coupled with the Company's
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
- O let
and dv/dt capabilities and unrivalled gate charge
INTERNAL SCHEMATIC DIAGRAM
(s) bso
and switching characteristics.
ct
APPLICATIONS
SWITCH MODE POWER SUPPLIES (SMPS)
du ) - O
s
s DC-AC CONVERTERS FOR WELDING
ro
EQUIPMENT AND UNINTERRUPTIBLE
t(s
POWER SUPPLIES AND MOTOR DRIVE
P
s HIGH CURRENT, HIGH SPEED SWITCHING
ol ete oduc
O bs e Pr
ABSOLUTE MAXIMUM RATINGS
let
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 800 V
so
V DGR Drain- gate Voltage (R GS = 20 k) 800 V