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PBHV8140Z
500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 01 -- 11 December 2009 Product data sheet




1. Product profile

1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBHV9540Z.

1.2 Features
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
Medium power SMD plastic package

1.3 Applications
LED driver for LED chain module
LCD backlighting
Automotive motor management
Switch Mode Power Supply (SMPS)

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCESM collector-emitter peak VBE = 0 V - - 500 V
voltage
VCEO collector-emitter voltage open base - - 400 V
IC collector current - - 1 A
hFE DC current gain VCE = 10 V; [1] 100 155 -
IC = 50 mA

[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBHV8140Z
500 V, 1 A NPN high-voltage low VCEsat (BISS) transistor



2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
4 2, 4
2 collector
3 emitter 1
4 collector
1 2 3 3
sym016




3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBHV8140Z SC-73 plastic surface-mounted package with increased SOT223
heatsink; 4 leads


4. Marking
Table 4. Marking codes
Type number Marking code
PBHV8140Z V8140Z




PBHV8140Z_1