Text preview for : buv98v.pdf part of ST buv98v . Electronic Components Datasheets Active components Transistors ST buv98v.pdf
Back to : buv98v.pdf | Home
BUV98V
NPN TRANSISTOR POWER MODULE
s HIGH CURRENT POWER BIPOLAR MODULE
s VERY LOW Rth JUNCTION CASE
s SPECIFIED ACCIDENTAL OVERLOAD
AREAS
4
s ISOLATED CASE (2500V RMS)
3
s EASY TO MOUNT
s LOW INTERNAL PARASITIC INDUCTANCE
1
INDUSTRIAL APPLICATIONS: 2
s MOTOR CONTROL
s SMPS & UPS
s WELDING EQUIPMENT Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VC EV Collector-Emitter Voltage (V BE = -5 V) 850 V
V CEO(sus) Collector-Emitter Voltage (I B = 0) 450 V
V EBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 30 A
I CM Collector Peak Current (t p = 10 ms) 60 A
IB Base Current 8 A
IB M Base Peak Current (tp = 10 ms) 30 A
P tot Total Dissipation at Tc = 25 o C 150 W
o
T stg Storage Temperature -55 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
V ISO Insulation Withstand Voltage (AC-RMS) 2500 V
January 1995 1/7
BUV98V
THERMAL DATA
o
R thj-cas e Thermal Resistance Junction-case Max 0.83 C/W
R thc-h Thermal Resistance Case-heatsink With Conductive
o
Grease Applied Max 0.05 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
IC ER Collector Cut-off V CE = V CEV 1 mA
Current (R BE = 5 ) V CE = V CEV Tj = 100 o C 8 mA
I CE V Collector Cut-off V CE = V CEV 0.4 mA
Current (V BE = -5V) V CE = V CEV Tj = 100 o C 4 mA
IE BO Emitter Cut-off Current V EB = 5 V 2 mA
(I C = 0)
V CEO( SUS )* Collector-Emitter I C = 0.2 A L = 25 mH 450 V
Sustaining Voltage V clamp = 450 V
h FE DC Current Gain I C = 24 A V CE = 5 V 9
V CE (sat) Collector-Emitter I C = 20 A IB = 4 A 1.5 V
Saturation Voltage I C = 30 A IB = 8 A 3.5 V
VB E(sat) Base-Emitter I C = 20 A IB = 4 A 1.6 V
Saturation Voltage
di C /dt Rate of Rise of V CC = 300 V RC = 0 t p = 3