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CES2310
N-Channel Enhancement Mode Field Effect Transistor

FEATURES

30V, 4.8A, RDS(ON) = 34m @VGS = 10V.
RDS(ON) = 38m @VGS = 4.5V.
RDS(ON) = 50m @VGS = 2.5V.
RDS(ON) = 60m @VGS = 1.8V.
D
High dense cell design for extremely low RDS(ON).
Rugged and reliable.

Lead-free plating ; RoHS compliant.

SOT-23 package.
G
D
S

G

SOT-23 S

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS