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MMBT5551
Transistor(NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR

Features
Complementary to MMBT5401
Ideal for medium power amplification and switching

MARKING: G1

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 180 V
VCEO Collector-Emitter Voltage 160 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 0.6 A
PC Collector Power Dissipation 300 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 180 V
Collector-emitter breakdown
V(BR)CEO* IC= 1mA, IB=0 160 V
voltage
Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 6 V
Collector cut-off current ICBO VCB= 120V, IE=0 50 nA
Emitter cut-off current IEBO VEB= 4V, IC=0 50 nA
hFE1* VCE=5V, IC=1mA 80
DC current gain hFE2* VCE=5V, IC =10mA 100 300
hFE3* VCE=5V, IC=50mA 50
IC=10mA, IB=1mA 0.15
Collector-emitter saturation voltage VCEsat* V
IC=50mA, IB=5mA 0.2
IC=10mA, IB= 1mA 1
Base-emitter saturation voltage VBEsat* V
IC=50mA, IB= 5mA 1
Transition frequency fT VCE=10V,IC=10mA,f=100MHz 100 300 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 6 pF
Input capacitance Cib VBE=0.5V,IC=0,f=1MHz 20 pF
VCE=5V,Ic=0.25mA,
Noise figure NF 8 dB
f=10Hz to 15.7KHz,Rs=1k
*Pulse test
MMBT5551
Transistor(NPN)

Typical Characteristics