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BUV27
MEDIUM POWER NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s FAST SWITCHING SPEED
s LOW COLLECTOR EMITTER SATURATION
APPLICATIONS
s SWITCHING REGULATORS
s MOTOR CONTROL
3
DESCRIPTION 2
1
The BUV27 is a Multiepitaxial Planar NPN
Transistor in TO-220 package. It is intended for
use in high frequency and efficency converters, TO-220
switching regulators and motor control.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-base Voltage (I E = 0) 240 V
V CEO Collector-Emitter Voltage (I B = 0) 120 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
IC Collector Current 12 A
I CM Collector Peak Current 20 A
IB Base Current 4 A
I BM Base Peak Current 6 A
P tot Total Dissipation at Tc < 25 o C 85 W
P tot Total Dissipation at T c < 60 o C 65 W
o
T stg Storage Temperature -65 to +175 C
o
Tj Max. Operating Junction Temperature 175 C
June 1997 1/4
BUV27
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 1.76 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
o
I CER Collector Cut-off V CE = 240V T c = 125 C 3 mA
Current (R BE = 50)
o
I CEX Collector Cut-off V CE = 240V VBE = -1.5V T c = 125 C 1 mA
Current
I EBO Emitter Cut-off Current V EB = 5 V 1 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 0.2 A L = 25mH 120 V
Sustaining Voltage
V EBO Emitter-Base Voltage I E = 50mA 7 30 V
(I C = 0)
V CE(sat) Collector-Emitter I C = 4A I B = 0.4A 0.7 V
Saturation Voltage I C = 8A I B = 0.8A 1.5 V
V BE(sat) Base-Emitter I C = 8A I B = 0.8A 2 V
Saturation Voltage
RESISTIVE LOAD
t on Turn-on Time V CC = 90V I C = 8A 0.4 0.8 ms
ts Storage Time V BE = - 6V I B1 = 0.8A 0.5 1.2