Text preview for : a94.pdf part of LGE a94 . Electronic Components Datasheets Active components Transistors LGE a94.pdf
Back to : a94.pdf | Home
A94(PNP)
TO-92 Bipolar Transistors
1. EMITTER TO-92
2. BASE
3. COLLECTOR
Features
High voltage
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -400 V
VCEO Collector-Emitter Voltage -400 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -0.2 A
PC Collector Power Dissipation 0.625 W
Junction Temperature
Tj 150
Storage Temperature
Tstg -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR) CBO IC= -100A, IE=0 -400 V
Collector-emitter breakdown voltage V(BR) CEO IC= -1mA,IB=0 -400 V
Emitter-base breakdown voltage V(BR) EBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-400V, IE=0 -0.1 A
Collector cut-off current ICEO VCE=-400V, IB=0 -5 A
Emitter cut-off current IEBO VEB= -4V, IC=0 -0.1 A
hFE(1) VCE=-10V, IC=-10mA 80 300
DC current gain hFE(2) VCE=-10V, IC=-1mA 70
hFE(3) VCE=-10V, IC=-100mA 60
VCE (sat) IC=-10mA, IB=-1mA -0.2 V
Collector-emitter saturation voltage
VCE (sat) IC=-50mA, IB=-5mA -0.3 V
Base-emitter saturation voltage VBE (sat) IC=-10mA, IB= -1mA -0.75 V
VCE=-20V, IC=-10mA
Transition frequency fT 50 MHz
f =30MHz
A94(PNP)
TO-92 Bipolar Transistors