Text preview for : BGY241_6.pdf part of Philips BGY241 Dualband GSM Amplifier
Back to : BGY241_6.pdf | Home
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D373
BGY241 UHF amplifier module
Product specification Supersedes data of 1999 May 01 1999 Sep 09
Philips Semiconductors
Product specification
UHF amplifier module
FEATURES · 3.5 V nominal supply voltage · 35 dBm output power · Easy output power control by DC voltage. APPLICATIONS · Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the 880 to 915 MHz frequency range. DESCRIPTION The BGY241 is a three-stage UHF amplifier module in a SOT482C leadless package with a plastic cover. The module consists of one NPN silicon planar transistor die and one bipolar monolithic integrated circuit mounted together with matching and bias circuit components on a metallized ceramic substrate. PINNING - SOT482C PIN 1 2 3 4 5 RF input VC VS RF output ground
BGY241
DESCRIPTION
handbook, halfpage
5
4
3
2
1
MBK201
Bottom view
Fig.1 Simplified outline.
QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; = 1 : 8 f (MHz) 880 to 915 VS (V) 3.5 VC (V) 2.2 PL (dBm) 35.2 Gp (dB) 35.2 (%) typ. 43 ZS; ZL () 50
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS VC PD PL Tstg Tmb PARAMETER DC supply voltage DC control voltage input drive power load power storage temperature operating mounting base temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. CONDITIONS VC = 0; PD = 0 mW VC 0.2 V - - - - - -40 -30 MIN. 7 5.5 2.7 10 36 +100 +100 MAX. UNIT V V V dBm dBm °C °C
1999 Sep 09
2
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
CHARACTERISTICS ZS = ZL = 50 ; PD = 0 dBm; VS = 3.5 V; VC 2.2 V; f = 880 to 915 MHz; Tmb = 25 °C; = 1 : 8; tp = 575 µs; unless otherwise specified. SYMBOL IQ ICM PL PARAMETER leakage current peak control current load power CONDITIONS VC = 0.2 V; PD = 0 mW VS = 7 V; VC = 0; PD = 0 mW PL = 35.2 dBm VC = 2.2 V VS = 3 V; VC = 2.2 V; Tmb = -20 to +85 °C Gp H2 H3 VSWRin power gain efficiency second harmonic third harmonic input VSWR stability PL = 35.2 dBm PL = 34 dBm PL = 35.2 dBm PL = 35.2 dBm PL = 5 to 35 dBm VS = 3 to 5 V; PD = -3 to +3 dBm; VC = 0 to 2.2 V; PL 35.2 dBm; VSWR 6 : 1 through all phases VC = 0.5 V; PD = 3 dBm PL = -5 to +5 dBm PL = 5 to 35.2 dBm; bandwidth = 100 kHz; 20 MHz above transmitter band PD = 3% AM; f = 100 kHz; PL = 5 to 35.2 dBm PD = -0.5 to +0.5 dBm; PL = 5 to 35.2 dBm PL = 35.2 dBm; f = 915 MHz; PL (925 MHz)/PD (905 MHz) MIN. - - - 35.2 33.6 - 35 - - - - TYP. - 6 - 35.5 - 35.2 42 -50 -53 - - MAX. 10 20 3 - - - - -38 -40 3:1 -60 dBc UNIT µA mA mA dBm dBm dB % dBc dBc
isolation control bandwidth control slope Pn noise power
- 1.5 - -
-43 - 240 -76
-37 - - -75
dBm MHz dB/V dBm
AM/AM conversion AM/PM conversion TX/RX conversion tr tf carrier rise time carrier fall time ruggedness
- - -
12 - 25 1.5 1.5
14 2 30 2 2
% deg dB µs µs
PL = 6 to 34 dBm; time to settle within - -0.5 dB of final PL PL = 6 to 34 dBm; time to settle within - -0.5 dB of final PL VS = 5 V; PL = 34.8 dBm; VSWR 12 : 1 through all phases VS = 4.5 V; VC = 2.3 V; VSWR 5 : 1 through all phases
no degradation no degradation
1999 Sep 09
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
handbook, halfpage
4
MGS648
MGS649
PL (W) 3
880 MHz 915 MHz
handbook, halfpage
8
PL (W) 6
880 MHz 915 MHz
2
4
1
2
0 1 1.5 2 VC (V) 2.5
0 2 3 4 5 VS (V) 6
ZS = ZL = 50 ; VS = 3.5 V; PD = 1 mW; Tmb = 25 °C; = 1 : 8; tp = 575 µs.
ZS = ZL = 50 ; VC = 2.2 V; PD = 1 mW; Tmb = 25 °C; = 1 : 8; tp = 575 µs.
Fig.2
Load power as a function of control voltage; typical values.
Fig.3
Load power as a function of supply voltage; typical values.
MGS650
MGS651
handbook, halfpage
50 (%) 40
915 MHz 880 MHz
handbook, halfpage
5
PL (W)
4
30
3
20
2
10
1
0 0 1 2 3 4 PL (W) 5
0 880
890
900
910 f (MHz)
920
ZS = ZL = 50 ; VS = 3.5 V; PD = 1 mW; Tmb = 25 °C; = 1 : 8; tp = 575 µs.
ZS = ZL = 50 ; VS = 3.5 V; PD = 1 mW; VC = 2.2 V; Tmb = 25 °C; = 1 : 8; tp = 575 µs.
Fig.4
Efficiency as a function of load power; typical values.
Fig.5
Load power as a function of frequency; typical values.
1999 Sep 09
4
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
MGS652
handbook, halfpage
4
MGS653
handbook, halfpage
0
H2, H3 VSWRin (dBc) -20 3
-40 H3 880 MHz 915 MHz 1 0 1 2 3 PL (W) 4 -80 880 -60 H2
2
890
900
910 f (MHz)
920
ZS = ZL = 50 ; VS = 3.5 V; PD = 1 mW; Tmb = 25 °C; = 1 : 8; tp = 575 µs
ZS = ZL = 50 ; VS = 3.5 V; PD = 1 mW; PL = 2.5 W; Tmb = 25 °C; = 1 : 8; tp = 575 µs.
Fig.6
Input VSWR as a function of load power; typical values.
Fig.7
Harmonics as a function of frequency; typical values.
MGS654
handbook, halfpage
5
PL (W)
handbook, halfpage
4
(1) (2)
12 output AM (%) 10
MGS655
880 MHz
915 MHz 8
3
(3) (4)
6
2 4 1
2
0 0 20 40 60 80 100 Tmb (°C)
0 0 10 20 30 PL (dBm) 40
ZS = ZL = 50 ; PD = 1 mW; VC = 2.2 V; = 1 : 8; tp = 575 µs. (1) VS = 3.5 V; f = 880 MHz. (2) VS = 3.5 V; f = 915 MHz. (3) VS = 3.1 V; f = 880 MHz. (4) VS = 3.1 V; f = 915 MHz.
ZS = ZL = 50 ; VS = 3.5 V; PD = 1 mW; Tmb = 25 °C; f = 100 kHz; input amplitude modulation = 3%; = 1 : 8; tp = 575 µs.
Fig.8
Load power as a function of mounting base temperature; typical values.
Fig.9
Output amplitude modulation as a function of load power; typical values.
1999 Sep 09
5
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
handbook, full pagewidth
C2
C1 Z1 C3 R1 Z2
C4
RF input
VC
VS
RF output
MGS656
Fig.10 Test circuit.
List of components (see Fig.10) COMPONENT C1,C2 C3 C4 Z1,Z2 R1 Note 1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (r = 2.2); thickness 1/32 inch. DESCRIPTION multilayer ceramic chip capacitor tantalum capacitor electrolytic capacitor stripline; note 1 metal film resistor VALUE 680 pF 2.2 µF; 35 V 47 µF; 40 V 50 100 ; 0.6 W width 2.33 mm DIMENSIONS - 2222 030 37479 - 2322 156 11001 CATALOGUE NO. 2222 851 11681
1999 Sep 09
6
Philips Semiconductors
Product specification
UHF amplifier module
SOLDERING The indicated temperatures are those at the solder interfaces. Advised solder types are types with a liquidus less than or equal to 210 °C. Solder dots or solder prints must be large enough to wet the contact areas. Soldering can be carried out using a conveyor oven, a hot air oven, an infrared oven or a combination of these ovens. A double reflow process is permitted. Hand soldering is not recommended because the soldering iron tip can exceed the maximum permitted temperature of 250 °C and damage the module. In case hand soldering is needed, recommendations can be found in RNR-45-98-A-0485. The maximum allowed temperature is 250 °C for a maximum of 5 seconds. The maximum ramp-up is 10 °C per second. The maximum cool-down is 5 °C per second. Cleaning The following fluids may be used for cleaning: · Alcohol · Bio-Act (Terpene Hydrocarbon) · Acetone. Ultrasonic cleaning should not be used since this can cause serious damage to the product.
100
BGY241
handbook, halfpage
300
MGM159
T (°C) 200
0 0 1 2 3 4 t (min) 5
Fig.11 Recommended reflow temperature profile.
1999 Sep 09
7
Philips Semiconductors
Product specification
UHF amplifier module
BGY241
handbook, full pagewidth
4.400 4.000 3.200
4.000 2.800 1.800
0 scale
2.5 mm
0.600 1.400 1.000
0.500
1.300 1.700 13.500 1.800
2.250 10.700
2.500
12.900
13.500
1.350 (2×)
6.700 (2×)
5.900 (2×)
5.650 (2×)
4.800 (2×)
2.400
1.900
3.200
0.900
0.800
1.000 0.050 0.900 1.000 1.300 Solder land Solder paste Green tape area, max. height 0.03 mm 3.150 3.900 1.200 0.600 2.300 3.700 0.900
0.450
MGS345
Dimensions in mm.
Fig.12 Footprint SOT482C.
1999 Sep 09
8
1.950
2.500
2.250
14.300
1.200
1.300
Philips Semiconductors
Product specification
UHF amplifier module
PACKAGE OUTLINE Leadless surface mounted package; plastic cap; 4 terminations
BGY241
SOT482C
e b (4×)
e1 b1 b2
e b2
d b3 b3
L
1
2
3
4 L1
L2
D D1
A c 5
E1 pin 1 index
E
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.90 1.59 b 1.9 1.7 b1 1.4 1.2 b2 0.8 0.6 b3 0.6 0.4 c 0.70 0.57 D 13.7 13.3 D1 13.35 13.05 d 2.0 E 8.2 7.8 E1 7.85 7.55 e 2.6 2.4 e1 4.6 4.4 L 1.15 0.85 L1 2.65 2.35 L2 3.85 3.55
OUTLINE VERSION SOT482C
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-05-18 99-08-16
1999 Sep 09
9
Philips Semiconductors
Product specification
UHF amplifier module
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BGY241
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Sep 09
10
Philips Semiconductors
Product specification
UHF amplifier module
NOTES
BGY241
1999 Sep 09
11
Philips Semiconductors a worldwide company
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 © Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 68
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/06/pp12
Date of release: 1999
Sep 09
Document order number:
9397 750 06002