File information: | |
File name: | BGY241_6.pdf [preview BGY241] |
Size: | 96 kB |
Extension: | |
Mfg: | Philips |
Model: | BGY241 🔎 |
Original: | BGY241 🔎 |
Descr: | Dualband GSM Amplifier |
Group: | Electronics > Components > Operational amplifiers |
Uploaded: | 04-02-2006 |
User: | martinch |
Multipart: | No multipart |
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Decompress result: | OK | |
Extracted files: | 1 | |
File name BGY241_6.pdf DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D373 BGY241 UHF amplifier module Product specification Supersedes data of 1999 May 01 1999 Sep 09 Philips Semiconductors Product specification UHF amplifier module FEATURES · 3.5 V nominal supply voltage · 35 dBm output power · Easy output power control by DC voltage. APPLICATIONS · Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the 880 to 915 MHz frequency range. DESCRIPTION The BGY241 is a three-stage UHF amplifier module in a SOT482C leadless package with a plastic cover. The module consists of one NPN silicon planar transistor die and one bipolar monolithic integrated circuit mounted together with matching and bias circuit components on a metallized ceramic substrate. PINNING - SOT482C PIN 1 2 3 4 5 RF input VC VS RF output ground BGY241 DESCRIPTION handbook, halfpage 5 4 3 2 1 MBK201 Bottom view Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; = 1 : 8 f (MHz) 880 to 915 VS (V) 3.5 VC (V) 2.2 PL (dBm) 35.2 Gp (dB) 35.2 (%) typ. 43 ZS; ZL () 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS VC PD PL Tstg Tmb PARAMETER DC supply voltage DC control voltage input drive power load power storage temperature operating mounting base temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. CONDITIONS VC = 0; PD = 0 mW VC 0.2 V - - - - - -40 -30 MIN. 7 5.5 2.7 10 36 +100 +100 MAX. UNIT V V V dBm dBm °C °C 1999 Sep 09 2 Philips Semiconductors Product specification UHF amplifier module BGY241 CHARACTERISTICS ZS = ZL = 50 ; PD = 0 dBm; VS = 3.5 V; VC 2.2 V; f = 880 to 915 MHz; Tmb = 25 °C; = 1 : 8; tp = 575 µs; unless otherwise specified. SYMBOL IQ ICM PL PARAMETER leakage current peak control current load power CONDITIONS VC = 0.2 V; PD = 0 mW VS = 7 V; VC = 0; PD = 0 mW PL = 35.2 dBm VC = 2.2 V VS = 3 V; VC = 2.2 V; Tmb = -20 to +85 °C Gp H2 H3 VSWRin power gain efficiency second harmonic third harmonic input VSWR stability PL = 35.2 dBm PL = 34 dBm PL = 35.2 dBm PL = 35.2 dBm PL = 5 to 35 dBm VS = 3 to 5 V; PD = -3 to +3 dBm; VC = 0 to 2.2 V; PL 35.2 dBm; VSWR 6 : 1 through all phases VC = 0.5 V; PD = 3 dBm PL = -5 to +5 dBm PL = 5 to 35.2 dBm; bandwidth = 100 kHz; 20 MHz above transmitter band PD = 3% AM; f = 100 kHz; PL = 5 to 35.2 dBm PD = -0.5 to +0.5 dBm; PL = 5 to 35.2 dBm PL = 35.2 dBm; f = 915 MHz; PL (925 MHz)/PD (905 MHz) MIN. - - - 35.2 33.6 - 35 - - - - TYP. - 6 - 35.5 - 35.2 42 -50 -53 - - MAX. 10 20 3 - - - - -38 -40 3:1 -60 dBc UNIT µA mA mA dBm dBm dB % dBc dBc isolation control bandwidth control slope Pn noise power - 1.5 - - -43 - 240 -76 -37 - - -75 dBm MHz dB/V dBm AM/AM conversion AM/PM conversion TX/RX conv |
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