Philips BGY282 free download

File name BGY282_N_5.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D727 BGY282 Dual band UHF amplifier module for GSM900 and GSM1800 Preliminary specification 2002 Apr 9 Philips Semiconductors Preliminary specification Dual band UHF amplifier module for GSM900 and GSM1800 FEATURES · Dual band GSM amplifier · 3.5 V nominal supply voltage · 33 dBm output power for GSM1800 · 35 dBm output power for GSM900 · Easy output power control by DC voltage · Internal input and output matching · Easy band selection by DC voltage · Suited for GPRS class 12 (duty cycle 4 : 8). APPLICATIONS · Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in two frequency bands: 880 to 915 MHz and 1710 to 1785 MHz. 12 BGY282 PINNING - SOT632A PIN 1 2 3, 6, 9, 12 4 5 7 8 10 11 VAPC Ground VS1 (GSM900) RF output 1 (GSM900) RF output 2 (GSM1800) VS2 (GSM1800) Vband RF input 2 (GSM1800) DESCRIPTION RF input 1 (GSM900) 1 2 3 4 5 6 DESCRIPTION The BGY282 is a power amplifier module in a SOT632A surface mounted ceramic package with a plastic cap. The module consists of two separated line-ups, one for GSM900 and one for GSM1800 with internal power control, input and output matching. 11 Bottom view 10 9 8 7 MBL253 Fig.1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; = 2 : 8 f (MHz) 880 to 915 1710 to 1785 VS (V) 3.5 3.5 VAPC (V) 2.2 2.2 PL (dBm) typ. 35 typ. 33 (%) 50 45 ZS , ZL () 50 50 2002 Apr 9 2 Philips Semiconductors Preliminary specification Dual band UHF amplifier module for GSM900 and GSM1800 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VS1, VS2 VAPC PD1, PD2 PL1 PL1 PL2 PL2 PS1 PS2 Tstg Tmb DC supply voltage DC control voltage input drive power load power 1 (GSM900) load power 1 (GSM900) load power 2 (GSM1800) load power 2 (GSM1800) total power from supply during pulse (GSM900) total power from supply during pulse (GSM1800) storage temperature operating mounting base temperature = 4 : 8; VSWRout 2 : 1 =4:8 =4:8 = 4 : 8; VSWRout 2 : 1 PARAMETER CONDITIONS VAPC = 0; RFIN = off VAPC > 0.5 V; RFIN = on MIN. - - - - - - - - - - -40 -30 BGY282 MAX. 7 5.5 3 10 36 35 35 34 7.5 4.5 +100 +100 UNIT V V V dBm dBm dBm dBm dBm W W °C °C Note: PL is forward power, measured in a coupler. 2002 Apr 9 3 Philips Semiconductors Preliminary specification Dual band UHF amplifier module for GSM900 and GSM1800 BGY282 CHARACTERISTICS ZS = ZL = 50 ; PD1,2 = 0 dBm; VS1 = VS2 = 3.5 V; VAPC 2.2 V; Tmb = 25 °C; tp = 575 µs; = 2 : 8; f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); measured on demoboard of fig 7; unless otherwise specified. SYMBOL Vband Iband IL PD1 PD2 PL1 PARAMETER band switch voltage band switch current leakage current input drive power (GSM900) input drive power (GSM1800) VAPC = 2.2 V load power GSM900 VAPC = 2.2 V; VS1 = 3.1 V VAPC = 2.2 V PL2 1 1 2 2 load power GSM1800 efficiency GSM900 efficiency GSM900 efficiency GS