Philips BGY212A_N free download

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D373 BGY212A UHF amplifier module Preliminary specification 1999 Aug 23 Philips Semiconductors Preliminary specification UHF amplifier module FEATURES · 3.5 V nominal supply voltage · 2 W output power · Easy output power control by DC voltage. APPLICATIONS · Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the 1710 to 1785 MHz frequency range. DESCRIPTION book, halfpage BGY212A PINNING - SOT482C PIN 1 2 3 4 5 VC VS RF output ground DESCRIPTION RF input The BGY212A is a three-stage UHF amplifier module in a SOT482C leadless package with a plastic cover. The module consists of one NPN silicon planar transistor die and one bipolar monolithic integrated circuit mounted together with matching and bias circuit components on a metallized ceramic substrate. 5 4 3 2 1 MBK201 Bottom view Fig.1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; = 1 : 8 f (MHz) 1710 to 1785 VS (V) 3.5 VC (V) 2.2 PL (dBm) typ. 33 Gp (dB) typ. 33 (%) typ. 40 ZS , ZL () 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS VC PD PL Tstg Tmb PARAMETER DC supply voltage DC control voltage input drive power load power storage temperature operating mounting base temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. CONDITIONS VC < 0.2 V; PD = 0 mW VC 0.2 V - - - - - -40 -30 MIN. 7 4.1 2.7 10 34.1 +100 +100 MAX. V V V dBm dBm °C °C UNIT 1999 Aug 23 2 Philips Semiconductors Preliminary specification UHF amplifier module BGY212A CHARACTERISTICS ZS = ZL = 50 ; PD = 0 dBm; VS = 3.5 V; VC 2.2 V; f = 1710 to 1785 MHz; Tmb = 25 °C; = 1 : 8; tp = 575 µs unles otherwise specified. SYMBOL IQ ICM PL PARAMETER leakage current peak control current load power VC = 0.2 V VC = 0.2 V; VS = 7 V adjust V C for PL = 32 dBm VC = 2.2 V; VS = 3.5 V VC = 2.2 V; VS = 3.2 V VC = 2.2 V; VS = 3.2 V; Tmb = 85 °C Gp H2 H3 VSWRin power gain efficiency second harmonic third harmonic input VSWR stability PL = 32 dBm PL = 32 dBm PL = 32 dBm PL = 32 dBm PL = 2 to 32 dBm VS = 3.2 to 4.1 V; PD = -3 to 3 dBm; VC = 0 to 2.2 V; PL 33 dBm; VSWR 8 : 1 through all phases VC = 0.2 V; PD = 3 dBm PL = 2 to 32 dBm; bandwidth = 100 kHz; 20 MHz above transmission band PD with 3% AM; f = 100 kHz; PL = 2 to 32 dBm PD = -0.5 to 0.5 dBm; PL = 2 to 32 dBm PL = -8 to +2 dBm PL = 2 to 32 dBm TX / RX conversion tr tf carrier rise time carrier fall time ruggedness PL = 32 dBm; f = 1785 MHz PL (1805 MHz) / PD (1765 MHz) PL = 2 to 32 dBm; time to settle within -0.5 dB of final PL PL = 2 to 32 dBm; time to fall below - 33 dBm VS = 4.1 V; adjust VC for PL = 33 dBm; VSWR 8 : 1 through all phases CONDITIONS - - - - 32 31 - - - - - - - MIN. - 5