Philips BGY280_N free download

File name BGY280_N_2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D454 BGY280 UHF amplifier module Preliminary specification 2000 Nov 15 Philips Semiconductors Preliminary specification UHF amplifier module FEATURES · Dual band GSM amplifier · 3.6 V nominal supply voltage · 33.5 dBm output power for GSM1800 · 35.5 dBm output power for GSM900 · Easy output power control by DC voltage. · Internal input and output matching. APPLICATIONS · Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in two frequency bands: 880 to 915 MHz and 1710 to 1785 MHz. DESCRIPTION The BGY280 is a power amplifier module in a SOT559A leadless package with a plastic cap. The dimensions are 13.75 x 11 x 1.7 mm. The module consists of two separated line-ups. One for GSM900 and one for GSM1800. Internal power control, input and output matching. PINNING - SOT559A PIN 1,2,3,6,9,10,11,14 4 5 7 8 12 13 15 16 BGY280 DESCRIPTION Ground RF output 2 (1800 MHz) VS2 (1800 MHz) VS1 (900 MHz) RF output 1 (900 MHz) RF input 1 (900 MHz) VC1 (900 MHz) VC2 (1800 MHz) RF input 2 (1800 MHz) 1 16 15 14 13 12 11 Bottom view 2 3 4 5 6 7 8 10 9 MBL031 Fig.1 Simplified outline QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; = 2 : 8 f (MHz) 880 to 915 1710 to 1785 VS (V) 3.6 3.6 VC (V) 2.2 2.2 PL (dBm) typ. 35.5 typ. 33.5 Gp (dB) typ. 35.5 typ. 33.5 (%) 47 40 ZS, ZL () 50 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS1, VS2 VC1, VC2 PD1, PD2 PL1 PL2 Tstg Tmb PARAMETER DC supply voltage DC control voltage input drive power load power 1 load power 2 storage temperature operating mounting base temperature CONDITIONS VC1,2 = 0; RFIN = off VC1,2 > 0.5 V; RFIN = on - - - - - - -40 -30 MIN. 7 5.5 3 10 4 3 +100 +100 MAX. V V V mW W W °C °C UNIT 2000 Nov 15 2 Philips Semiconductors Preliminary specification UHF amplifier module CHARACTERISTICS ZS = ZL = 50 ; PD1,2 = 0 dBm; VS1 = VS2 = 3.6 V; VC1,2 2.2 V; Tmb = 25 °C; tp = 575 µs; = 2 : 8; f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified. SYMBOL IL PARAMETER leakage current CONDITIONS VC1,2 = 0.2 V VC1 = 2.2 V VC1 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C VC2 = 2.2 V VC2 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C PL1 = 35.5 dBm PL2 = 33 dBm PL1 = 35 dBm PL2 = 32 dBm PL1 = 34 dBm PL2 = 32 dBm VS1,2 = 3.2 to 5 V; PL1 = 34 dBm; PL2 = 32 dBm VS1,2 = 3.2 to 5 V; VC1,2 0.5 V VC1,2 = 0.5 V; PD1,2 = 3 dBm VC1,2 = 0.5 V; PD1,2 = 3 dBm MIN. - - 34.5 34 32.5 32 - - 40 33 - - - - - - - 120 - - - - - - -54 -42 -21 - 1.5 1.5 - -82 -80 - TYP. - - 35.5 35 33.5 33 35.5 33.5 45 38 - - BGY280 MAX. 10 2 - - - - - - - - -40 -35 3:1 8:1 -37 -37 -20 200 2 2 -71 -80 -73 6 UNIT µA mA dBm dBm dBm dBm dB dB % % dBc dBc ICM1, ICM2 peak control current PL1 PL2 GP1 GP2 1 2 H2, H3 load power GSM 900 load power GSM 1800 power gain GSM900 power gain GSM1800 efficiency GSM900 efficiency GSM1800 harmonics GSM900 harmonics GSM1800 input VSWR of active