Text preview for : BGY280_N_2.pdf part of Philips BGY280_N Dualband GSM Amplifier
Back to : BGY280_N_2.pdf | Home
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D454
BGY280 UHF amplifier module
Preliminary specification 2000 Nov 15
Philips Semiconductors
Preliminary specification
UHF amplifier module
FEATURES · Dual band GSM amplifier · 3.6 V nominal supply voltage · 33.5 dBm output power for GSM1800 · 35.5 dBm output power for GSM900 · Easy output power control by DC voltage. · Internal input and output matching. APPLICATIONS · Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in two frequency bands: 880 to 915 MHz and 1710 to 1785 MHz. DESCRIPTION The BGY280 is a power amplifier module in a SOT559A leadless package with a plastic cap. The dimensions are 13.75 x 11 x 1.7 mm. The module consists of two separated line-ups. One for GSM900 and one for GSM1800. Internal power control, input and output matching. PINNING - SOT559A PIN 1,2,3,6,9,10,11,14 4 5 7 8 12 13 15 16
BGY280
DESCRIPTION Ground RF output 2 (1800 MHz) VS2 (1800 MHz) VS1 (900 MHz) RF output 1 (900 MHz) RF input 1 (900 MHz) VC1 (900 MHz) VC2 (1800 MHz) RF input 2 (1800 MHz)
1 16 15 14 13 12 11 Bottom view
2
3 4 5 6 7 8
10
9
MBL031
Fig.1 Simplified outline
QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION Pulsed; = 2 : 8 f (MHz) 880 to 915 1710 to 1785 VS (V) 3.6 3.6 VC (V) 2.2 2.2 PL (dBm) typ. 35.5 typ. 33.5 Gp (dB) typ. 35.5 typ. 33.5 (%) 47 40 ZS, ZL () 50 50
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS1, VS2 VC1, VC2 PD1, PD2 PL1 PL2 Tstg Tmb PARAMETER DC supply voltage DC control voltage input drive power load power 1 load power 2 storage temperature operating mounting base temperature CONDITIONS VC1,2 = 0; RFIN = off VC1,2 > 0.5 V; RFIN = on - - - - - - -40 -30 MIN. 7 5.5 3 10 4 3 +100 +100 MAX. V V V mW W W °C °C UNIT
2000 Nov 15
2
Philips Semiconductors
Preliminary specification
UHF amplifier module
CHARACTERISTICS ZS = ZL = 50 ; PD1,2 = 0 dBm; VS1 = VS2 = 3.6 V; VC1,2 2.2 V; Tmb = 25 °C; tp = 575 µs; = 2 : 8; f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified. SYMBOL IL PARAMETER leakage current CONDITIONS VC1,2 = 0.2 V VC1 = 2.2 V VC1 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C VC2 = 2.2 V VC2 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C PL1 = 35.5 dBm PL2 = 33 dBm PL1 = 35 dBm PL2 = 32 dBm PL1 = 34 dBm PL2 = 32 dBm VS1,2 = 3.2 to 5 V; PL1 = 34 dBm; PL2 = 32 dBm VS1,2 = 3.2 to 5 V; VC1,2 0.5 V VC1,2 = 0.5 V; PD1,2 = 3 dBm VC1,2 = 0.5 V; PD1,2 = 3 dBm MIN. - - 34.5 34 32.5 32 - - 40 33 - - - - - - - 120 - - - - - - -54 -42 -21 - 1.5 1.5 - -82 -80 - TYP. - - 35.5 35 33.5 33 35.5 33.5 45 38 - -
BGY280
MAX. 10 2 - - - - - - - - -40 -35 3:1 8:1 -37 -37 -20 200 2 2 -71 -80 -73 6
UNIT µA mA dBm dBm dBm dBm dB dB % % dBc dBc
ICM1, ICM2 peak control current PL1 PL2 GP1 GP2 1 2 H2, H3 load power GSM 900 load power GSM 1800 power gain GSM900 power gain GSM1800 efficiency GSM900 efficiency GSM1800 harmonics GSM900 harmonics GSM1800 input VSWR of active device VSWRin input VSWR of inactive device isolation GSM900 isolation GSM1800
dBm dBm dBm dB/V µs µs dBm dBm dBm deg/dB
second harmonic isolation PL1 = 35 dBm from GSM900 into GSM1800 maximum slope tr tf carrier rise time carrier fall time -5 dBm < PL1,2 < PL max PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; time to settle within -0.5 dB of final PL PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; time to fall below -37 dBm PL1 34 dBm; bandwidth = 100 kHz; f = 925 - 935 MHz; fc = 897.5 MHz PL1 34 dBm; bandwidth = 100 kHz; f = 935 - 960 MHz; fc = 897.5 MHz PL2 32 dBm; bandwidth = 100 kHz; f = 1805 - 1880 MHz; fc = 1747.5 MHz PD1,2 = -0.5 to 0.5 dBm; PL1,2 = constant during measurement for PL1 = 6 to 34 dBm and PL2 = 4 to 32 dBm PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; f = 100 kHz; PD1,2 = 5.4 %
noise power GSM900 Pn noise power GSM1800 AM/PM conversion
AM/AM conversion
-
25
%
2000 Nov 15
3
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
SYMBOL
PARAMETER TX / RX conversion PL1 PL1 PL2 PL2
CONDITIONS = 34 dBm; f = 915 MHz (925 MHz) / PD (905 MHz) = 32 dBm; f = 1785 MHz (1765 MHz) / PD (1805 MHz)
MIN. -
TYP. 25
MAX. -
UNIT dB
control bandwidth stability
PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; VS1,2 = 3.2 to 5 V; VC = 0 to 2.2 V; PD1,2 = 0 to 3 dBm; PL1 < 34.8 dBm; PL2 < 32.5 dBm; VSWR 6 : 1 through all phases VS1,2 = 5 V; PD1,2 = 0 to 3 dBm; PL1 = 34.8 dBm; PL2 = 32.5 dBm; VSWR 6 : 1 through all phases VS1,2 = 4.2 V; PD1,2 = 0 to 3 dBm; PL1 = 34.8 dBm; PL2 = 32.5 dBm; VSWR 10 : 1 through all phases
1 -
1.5 -
- -60
MHz dBc
ruggedness
no degradation
no degradation
40 PL (dBm)
897.5MHz
50 (%) 40
1785MHz
35
1747.5MHz
30 30 20 25 10
1710MHz
915MHz 880MHz
20 1 1.5 2 VC (V)
ZS = Z L = 50 ; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; = 2 : 8; tp = 575 µs.
0 2.5 20 25 30 35 40 PL (dBm)
Z S = Z L = 50 ; VS = 3.6 V; P D = 0 dBm; T mb = 25 °C; = 2 : 8; tp = 575 µs.
Fig.2
Load power as a function of control voltage; typical values.
Fig.3
Efficiency as a function of load power; typical values.
2000 Nov 15
4
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
-20 H2 (dBc) -30
-20 H3 (dBc) -30
1710MHz
-40
915MHz 880MHz
-40
915MHz 880MHz 1785MHz 1710MHz
-50
1785MHz
-50
-60 20 25 30 35 PL (dBm) 40
-60 20 25 30 35 PL (dBm) 40
ZS = Z L = 50 ; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; = 2 : 8; tp = 575 µs.
Z S = Z L = 50 ; VS = 3.6 V; P D = 0 dBm; T mb = 25 °C; = 2 : 8; tp = 575 µs.
Fig.4
Second harmonic as a function of load power; typical values.
Fig.5
Third harmonic as a function of load power; typical values.
40 gain (dB) 30
small signal gain
40 gain (dB)
(1) (2) (3) (4) (5) (6)
30
(2) (3) (1)
small signal gain
20
conversion gain
20
conversion gain
10
10
(4) (5) (6)
0 10 20 30 40 PL (dBm)
0 10 20 30 40 PL (dBm)
ZS = Z L = 50 ; P D = 0 dBm; VS = 3.6 V;T mb = 25 °C; f c = 1747.5 MHz; = 2 : 8; t p = 575 µs. (1) f = 1805 MHz (2) f = 1842.5 MHz (3) f = 1880 MHz (4) f = 1615 MHz (5) f = 1625.5 MHz (6) f = 1690 MHz
Z S = Z L = 50 ; VS = 3.6 V; P D = 0 dBm; T mb = 25 °C; fc = 897.5 MHz; = 2 : 8; t p = 575 µs. (1) f = 925 MHz (2) f = 942.5 MHz (3) f = 960 MHz (4) f = 835 MHz (5) f = 852.5 MHz (6) f = 870 MHz
Fig.6
Gain as a function of load power; typical values.
Fig.7
Gain as a function of load power; typical values.
2000 Nov 15
5
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
40 output AM (%) 30
8 AM-PM (deg/dB) 6
1800MHz
20
900MHz
4
10
1800MHz
2
900MHz
0 0 10 20 30 40 PL (dBm)
0 -10 0 10 20 30 40 PL (dBm)
ZS = Z L = 50 ; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C;
Z S = Z L = 50 ; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C;
f = 100 kHz; input amplitude modulation = 5.4%; = 2 : 8; tp = 575 µs.
= 2 : 8; t p = 575 µs.
Fig.8
Output amplitude modulation as a function of load power; typical values.
Fig.9
Output phase at PD = +0.5 dBm, relatively to output phase at P D = -0.5 dBm; typical values.
-60 noise (dBm) -70
-80
RX=1845MHz
RX=942.5MHz
-90
-100 0 10 20 30 PL (dBm) 40
ZS = Z L = 50 ; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; = 2 : 8; tp = 575 µs.
Fig.10 Noise as a function of load power; typical values.
2000 Nov 15
6
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
RF input
RF output
VS
Z2
Z3
BGY280
GSM900
12 VC VC 13 15 16
GSM1800
8 7
5 4
Z1
Z4
RF input
RF output
VS
Fig.11 Test circuit
List of components (See Fig 10 and 11) COMPONENT C1, C4 C2, C3 Z1, Z2, Z3, Z4 R1, R2 Note 1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (r = 2.2); thickness 1/32 inch. DESCRIPTION multilayer ceramic chip capacitor electrolytic capacitor stripline; note 1 metal film resistor VALUE 100 µF; 40 V 100 nF 50 100 ; 0.6 W width 2.33 mm 2322 156 11001 DIMENSIONS CATALOGUE NO.
2000 Nov 15
7
Philips Semiconductors
Preliminary specification
UHF amplifier module
BGY280
Fig.12 PCB testcircuit
2000 Nov 15
8
Philips Semiconductors
Preliminary specification
UHF amplifier module
PACKAGE OUTLINE SOT559A
BGY280
Leadless surface mounted package; plastic cap; 16 terminations
L1 (4×) L (12×) 1 L2 16 b4 (4×) (4×) 15 e1 2 e1 b (12×) 3 4 5 e b2 (2×) b7 (4×) 13 b8 (4×) 12 11 b3 (4×) 10 b1 (2×) D D1 A c 9 14 6 e 7 8 e2 Z8 (6×) Z7 (6×) Z5 (4×) L3 (4×) Z6 (12×) Z (2×) Z4 (12×)
SOT559A
e2 Z1 (2×) Z3 (2×)
b6 (4×) b5 (4×)
Z2 (2×)
Dimensions solderresist
E1
E
pin 1 index
0
5 scale
10 mm
Z1 2.5 2.3
Z2 3.5 3.3
Z3 2.9 2.7
Z4 1.1 0.9
Z5 1.5 1.3
Z6 1.1 0.9
Z7 3.8 3.6
Z8 1.5 1.3
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.9 1.5 b 1.1 0.9 b1 3.5 3.3 b2 b3 b4 b5 b6 b7 b8 0.9 0.7 c D D1 E E1 e e1 3.3 e2 4.4 L 1.1 0.9 L1 1.6 1.4 L2 0.6 0.4 L3 1.6 1.4 Z 2.6 2.4
2.9 5.275 4.2 2.7 5.075 4.0
1.2 0.625 0.8 1.0 0.425 0.6
0.55 14.05 13.6 11.3 10.85 2.6 0.45 13.45 13.3 10.7 10.55
OUTLINE VERSION SOT559A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 00-01-31 00-09-28
2000 Nov 15
9
Philips Semiconductors
Preliminary specification
UHF amplifier module
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
BGY280
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2000 Nov 15
10
Philips Semiconductors a worldwide company
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260, Tel. +66 2 361 7910, Fax. +66 2 398 3447 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 © Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 70
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
budgetnum/printrun/ed/pp11
Date of release: 2000
Nov 15
Document order number:
9397 750 07748