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TDA8177
VERTICAL DEFLECTION BOOSTER
. . . . . .
POWER AMPLIFIER FLYBACK GENERATOR THERMAL PROTECTION OUTPUT CURRENT UP TO 3.0APP FLYBACK VOLTAGE UP TO 70V (on Pin 5) SUITABLE FOR DC COUPLING APPLICATION
DESCRIPTION Designed for monitors and high performance TVs, the TDA8177 vertical deflection booster delivers flyback voltages up to 70V. The TDA8177 operates with supplies up to 35V and provides up to 3APP output current to drive the yoke. The TDA8177 is offered in HEPTAWATT package. PIN CONNECTIONS
7 6 5 4 3 2 1 Tab connected to Pin 4 NON-INVERTING INPUT OUTPUT STAGE SUPPLY OUTPUT GROUND FLYBACK GENERATOR SUPPLY VOLTAGE INVERTING INPUT
HEPTAWATT (Plastic Package) ORDER CODE : TDA8177
BLOCK DIAGRAM
SUPPLY VOLTAGE 2 OUTPUT STAGE SUPPLY 6 FLYBACK GENERATOR 3 FLYBACK GENERATOR INVERTING INPUT 1 POWER AMPLIFIER NON-INVERTING INPUT 7 THERMAL PROTECTION 4 GROUND
8177-02.EPS
5
OUTPUT
TDA8177
December 1998
1/5
8177-01.EPS
TDA8177
ABSOLUTE MAXIMUM RATINGS
Symbol VS V6 V1 , V7 IO I3 I3 VESD Toper Tstg Tj
Notes : 1. 2. 3. 4.
Parameter Supply Voltage (Pin 2) (see note 1) Flyback Peak Voltage (Pin 6) (see note 1) Amplifier Input Voltage (Pins 1-7) (see note 1) Maximum Output Peak Current (see notes 2 and 3) Maximum Sink Current (first part of flyback) (t < 1ms) Maximum Source Current (t < 1ms) Electrostatic Handling for all pins (see note 4) Operating Ambient Temperature Storage Temperature Junction Temperature
Versus Pin 4. The output current can reach 4A peak for t 10µs (up to 120Hz). Provided SOAR is respected (see Figures 1 and 2). Equivalent to discharging a 100pF capacitor through a 1.5k series resistor.
Value 40 75 - 0.3, + VS 2.5 2.5 2.5 2000 - 20, + 75 - 40, + 150 +150
Unit V V V A A A V
o o o
C C
THERMAL DATA
Symbol Rth (j-c) Tt Tjr Parameter Junction-case Thermal Resistance Temperature for Thermal Shutdown Recommended Max. Junction Temperature Max. Value 3 150 120 Unit
o o o
C C
ELECTRICAL CHARACTERISTICS (VS = 35V, TA = 25oC, unless otherwise specified)
Symbol VS I2 I6 IO I1 I7 VIO VIO/dt GV V5L V5H VD5 - 6 VD3 - 2 V3SL V3SH Parameter Operating Supply Voltage Range Pin 2 Quiescent Current Pin 6 Quiescent Current Max. Peak Output Current Amplifier Bias Current Amplifier Bias Current Offset Voltage Offset Drift versus Temperature Voltage Gain Output Saturation Voltage to GND (Pin 4) Output Saturation Voltage to Supply (Pin 6) Diode Forward Voltage between Pins 5-6 Diode Forward Voltage between Pins 3-2 Saturation Voltage on Pin 3 Saturation Voltage to Pin 2 (2nd part of flyback) I5 = 1.5A I5 = - 1.5A I5 = 1.5A I3 = 1.5A I3 = 20mA I3 = - 1.5A 80 1 1.8 1.8 1.6 0.4 2.1 1.7 2.3 2.3 2.2 1 2.8 - 10 V1 = 22V, V7 = 23V V1 = 23V, V7 = 22V - 0.15 - 0.15 I3 = 0, I5 = 0 I3 = 0, I5 = 0, V6 = 35V 8 Test Conditions Min. 10 9 15 Typ. Max. 35 20 30 1.5 -1 -1 7 Unit V mA mA A µA µA mV µV/oC dB V V V V V V
8177-03.TBL
2/5
8177-02.TBL
C/W
8177-01.TBL
C
TDA8177
APPLICATION CIRCUITS AC COUPLING
+ VS CF 2 6 3 FLYBACK GENERATOR 1 POWER AMPLIFIER 7 VREF 2.2V THERMAL PROTECTION 5
0.47m F 1.5W YOKE 330W
R5
TDA8177
4 R3
R4
R2
CL
DC COUPLING
+ VS CF 2 6 3 FLYBACK GENERATOR 1 VREF+ Vertical Position Adjustment POWER AMPLIFIER 7 THERMAL PROTECTION 5
0.47m F 1.5W YOKE 330W
R5
TDA8177
VREF-VEE
4
R2
3/5
8177-04.EPS
R1
8177-03.EPS
R1
TDA8177
Figure 1 : Output Transistors SOA (for secondary breakdown)
IC (A) 10 @ Tcase = 25°C
Figure 2 : Secondary Breakdown Temperature Derating Curve (ISB = secondary breakdown current)
ISB (%) 100
90
1
80
10-1 t = 1ms t = 10ms t = 100ms 1 10
70
8177-05.EPS
10-2 102
60 25 50 75
100
125
4/5
8177-06.EPS
VCE (V)
Tcase (°C)
TDA8177
PACKAGE MECHANICAL DATA : HEPTAWATT
Dimensions A C D D1 E F F1 G G1 G2 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia.
Min.
Millimeters Typ.
2.4 1.2 0.35 0.6 2.41 4.91 7.49 10.05 16.97 14.92 21.54 22.62 2.6 15.1 6 2.8 5.08 3.65 2.54 5.08 7.62
Max. 4.8 1.37 2.8 1.35 0.55 08 0.9 2.67 5.21 7.8 10.4 10.4
Min.
Inches Typ.
0.094 0.047 0.014 0.024 0.095 0.193 0.295 0.396 0.668 0.587 0.848 0.891 0.100 0.200 0.300
Max. 0.189 0.054 0.110 0.053 0.022 0.031 0.035 0.105 0.205 0.307 0.409 0.409
3 15.8 6.6
0.102 0.594 0.236 0.110 0.200
0.118 0.622 0.260
HEPTV.TBL
3.85
0.144
0.152
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No licence is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1998 STMicroelectronics - All Rights Reserved Purchase of I2C Components of STMicroelectronics, conveys a license under the Philips I2C Patent. Rights to use these components in a I2C system, is granted provided that the system conforms to the I2C Standard Specifications as defined by Philips. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com
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PM-HEPTV.EPS