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TDA8808AT
Photo diode signal processor for
compact disc players
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INTEGRATED CIRCUITS
DATA SHEET
TDA8808T TDA8808AT Photo diode signal processor for compact disc players
Product specification File under Integrated Circuits, IC01 November 1987
Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
GENERAL DESCRIPTION
TDA8808T TDA8808AT
The TDA8808 is a bipolar integrated circuit designed for use in compact disc players with a single spot read-out system. It amplifies the photo-diode signals and processes the error signals for the focus- and radial control network. Features · Data amplifier with equalizer and AGC · Offset-free pre-amplifier with AGC for the servo signals · Trackloss and drop-out detection · Start-up procedure for focus · Normalizing focus error output signal to minimize radial error interference · Laser supply amplifier and reference source · Both TDA8808T and TDA8808AT versions suitable for car, portable and home applications · Single and dual supply application · Focus in-lock signal; ready signal output (RD). QUICK REFERENCE DATA SYMBOL Supply VP Vext Vext IQ IHFin(p-p) ID ILO Tamb Supply voltage range External voltage range TDA8808T TDA8808AT Quiescent supply current HF input current (peak-to-peak value) LF input current (for each diode input) Laser supply output current Operating ambient temperature range -30 - +85 °C Si/R7D = HIGH Z 0 -8 - -4 6 -2 µA mA fHFin = 100 kHz 3 - 10 µA Si/RD = 0 V -5,5 VP 7,5 -5,0 10 10 0 12 12,5 V V mA 4,5 5,0 5,5 V PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
PACKAGE OUTLINE 28-lead mini-pack; plastic (SO28; SOT136A); SOT136-1; 1996 August 13.
November 1987
2
Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
TDA8808T TDA8808AT
Fig.1 Block diagram.
November 1987
3
Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
PINNING
TDA8808T TDA8808AT
Fig.2 Pinning diagram.
November 1987
4
Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
Pin functions PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 MNEMONIC GCHF VP HFout DET Sc Si/RD Beq Bgc FOC START PLLH TL DODS Vext Positive supply voltage HF amplifier and equalizer voltage output HF detector voltage input Starting up capacitor input DESCRIPTION
TDA8808T TDA8808AT
Gain control input of HF amplifier. Current output from HF amplitude detector
On/off control (start input); ready signal output (starting up procedure successful) Equalizer reference current input DC and LF gain control reference current input Focus normalizing circuit starting current PLL on hold output Track loss output Drop out detector suppression input TDA8808T Negative supply connection for FE and FElag output stage; also substrate connection TDA8808AT Positive supply connection for FE and FElag output stage
14 15 16 17 18 19 20 21 23, 22 24, 25 26 27 28
LPF FE FElag LO LM GCLF Re2 Re1 D1, D2 D3, D4 HFin GND DEC
Low pass filter for Iret, used in track loss (TL) detector and LF gain control Current output of normalized, switched focus error signal Current output of switched focus error signal, intended for lag network. Laser amplifier current output Laser monitor diode input Gain control input for AC and LF amplifiers. Current output from LF amplitude detector Summation of amplified currents from D3 and D4 Summation of amplified currents from D1 and D2 Current inputs to DC and LF photo diode amplifier Current inputs to DC and LF photo diode amplifier Current input to HF amplifier Ground connection of device: also substrate connection for TDA8808AT Decoupling input (internal bypass)
November 1987
5
Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL TDA8808T VP-V(ext) VGND-V(ext) Vext-VGND VP-VGND VO VO VO VO Ptot Tstg Tamb Tj THERMAL RESISTANCE From junction to ambient Rth j-a pin 2 to pin 13 pin 27 to pin 13 TDA8808AT pin 13 to 27 pin 2 to pin 27 Output voltage ranges except FE and FElag FE and FElag (TDA8808T) FE and FElag (TDA8808AT) LM (open loop) Total power dissipation Storage temperature range Operating ambient temperature range Operating junction temperature 0 Vext VGND VGND see Fig.4 -55 -30 - VP VP Vext VP -0,3 -0,3 13 13 -0,3 -0,3 13 13 PARAMETER Supply voltage ranges (see Fig.3) MIN.
TDA8808T TDA8808AT
MAX.
UNIT
V V V V V V V V °C °C °C
+ 150 + 85 150
=
140 K/W
Fig.3
Supply voltages; (a) TDA8808T, (b) TDA8808AT. 6
Fig.4 Power derating curve.
November 1987
Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
TDA8808T TDA8808AT
CHARACTERISTICS VP = + 5 V; VGND = 0 V; Vext = -5 V (TDA8808T); Vext = + 10 V (TDA8808AT); VRE1 = VRE2 = 3,5 V; VFE = VFElag = 0 V (TDA8808T); VFE = VFElag = 5 V (TDA8808AT); RFOC START = 3,3 k; IBeq = IBgc = 50 µA (current sources); Tamb = 25 °C; all voltages measured with respect to VGND, unless otherwise specified SYMBOL Supply VP Vext Vext IQ VBeq IBeq VBgc IBgc VDEC ZDEC VHFin IHFin(p-p) ZHFin Supply voltage range External voltage range TDA8808T TDA8808AT Quiescent supply current Reference input (Beq) Input voltage level Input current Reference input (Bgc) Input voltage level Input current Decoupling input (DEC) Input voltage level Input impedance HF input (HFin) Input voltage level HF input current (peak-to-peak value) Input impedance HF part DC characteristics V HFout Gain ( G1 ) = -------------------I HFin G1(max) G1(min) G2 Maximum gain Minimum gain AC characteristics V O1 Gain ( G2 ) = 20 log --------V O2 V O1 Gain ( G3 ) = 20 log --------V O2 Phase of input/output signal at 1 MHz note 3 - /2 - rad. note 1 2 3,5 5 dB IHFin = ± 1 µA fHFin = 100 kHz 3 0,5 - 1 10 2 µA k - 1,4 - V - - VP-1,4 2 - - V k 1,15 - 1,25 -50 1,35 - V µA 500 - 560 -50 620 - mV µA VSi/RD = 0 V -5,5 VP 7,5 -5,0 10 10 0 12 12,5 V V mA 4,5 5,0 5,5 V PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VGCHF = 4 V VGCHF = 1,5V
390 -5
480 0
570 5
mV/µA mV/µA
G3
note 2
4
5,5
7
dB
November 1987
7
Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
SYMBOL 300 PARAMETER Group delay at fHFin = 300 kHz + f Flatness between 0,1 and 1 MHz HF output (HFout) Output voltage VHFout at IHFin = 0 Output voltage (peak-to-peak value) VO1(p-p) VO(p-p) ZHFout VDET0 Vrefp Vrefn ZDET at IHFin(p-p) = 7 µA at IHFin(p-p) = 4 to 10 µA Output impedance HF detector input (DET) DC voltage level Positive reference voltage VDET to VDET0 Negative reference voltage VDET to VDET0 Input impedance Gain control (GCHF) Input voltage for: VGCHF VGCHF ZGCHF IGCHF IGCHF IGCHF IGCHF IGCHF minimum HF gain maximum HF gain Input impedance at VGCHF = 1,5 to 4 V Output current (see Fig.5) VDET < Vrefn or VDET > Vrefp VDET < Vrefn or VDET > Vrefp Vrefn < VDET < VDETn1 or VDETp1 < VDET < Vrefp Vrefn < VDET < VDETn1 or VDETp1 < VDET < Vrefp VDETn1 < VDET < VDETp1 VDETp1/Vrefp; VDETn1/Vrefn DODS = HIGH DODS = X** -5,0 -0,65 10 -4,4 -0,35 12,5 DODS = LOW -0,65 -0,35 DODS = LOW DODS = HIGH 90 86 100 96 - 25 - - 1,8 3,4 -5% - -Vrefp 9 -10% 540 see Fig.5 IDET = 0 - 2,2 note 4 note 5 1 -20% - 1,20 M1 60 VGCHF = 4 V 1,5 2,4 note 3 * 9 note 3 - 290 CONDITIONS MIN. TYP.
TDA8808T TDA8808AT
MAX. - * UNIT ns ns
3,3
V
- +20% - - +10% +5% -
V V
V mV mV k
- - - 110 106 -0,2 -3,8 -0,2 15
V V M µA µA µA µA µA %
November 1987
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Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
SYMBOL PARAMETER PLLH output (pin 10) Output voltage LOW VPLLHL VPLLHH IPLLH IPLLH IDT1 IPLLH = 400 µA (sink current) Output voltage HIGH IPLLH = -50 µA (source current) Output sink current Output source current Threshold total LF current VDETp2/Vrefp; VDETn2/Vrefn LF photo diode inputs (pins 22 to 25) (values given for each input) VD ID ZD DC voltage level Input current range Input impedance at 1 MHz LF gain Maximum DC gain I Re1 for: A1 = --------------------- ; I D1 + I D2 ID3 = ID4 = 0 A11 A12 at lD1 = 0 µA; ID2 = 1 µA at lD1 = 1 µA; ID2 = 0 µA I Re2 for: A2 = --------------------- ; I D3 + I D4 ID1 = ID2 = 0 A21 A22 at lD3 = 0 µA; ID4 = 1 µA at lD3 = 1 µA; ID4 = 0 µA S1 mean value of A11, A12, A21, A22 Minimum DC gain I Re1 for: A3 = --------------------- ; I D1 + I D2 ID3 = ID4 = 0 A31 A32 at lD1 = 0 µA; ID2 = 1 µA at lD1 = 1 µA; ID2 = 0 µA I Re2 for: A4 = --------------------- ; I D3 + I D4 ID1 = ID2 = 0 A41 at lD3 = 0 µA; ID4 = 1 µA 9 S2-1 S2 VGCLF = 0,8 V S2-1 S2-1 S2 S2 VGCLF = 0,8 V 55 64 S1-10% S1 or 55 S1 S1 VGCLF = 3,5 V S1-10% S1 or 55 S1 S1 VGCLF = 3,5 V ID = 1 µA - 0 - 1,2 - 10 VGCLF = 3,5 V 2,4 0,5 - - 57,5 - 1,5 -100 2,0 62,5 - - CONDITIONS MIN. TYP.
TDA8808T TDA8808AT
MAX. UNIT
0,4 - - -50 - 67,5
V V mA µA µA %
- 6 -
V µA k
S1 S1
S1 S1 84
S2+1 S2+1
S2+1
November 1987
Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
SYMBOL A42 PARAMETER at lD3 = 1 µA; ID4 = 0 µA S2 mean value of A31, A32, A41, A42 AC gain for: G4 = 20 log P1; ID3 = ID4 = 0 G4 G4 G5 G5 at ID1 = 0; ID2(p-p) = 1 µA + 2 µADC at ID1(p-p) = 1 µA + 2 µADC; ID2 = 0 G5 = 20 log P2; ID1 = ID2 = 0 at ID3 = 0; ID4(p-p) = 1 µA + 2 µADC at ID3(p-p) = 1 µA + 2 µADC; ID4 = 0 Gain control (GCLF) Input voltage for: VGCLF VGCLF ZGCLF minimum LF gain maximum LF gain Input impedance Threshold total LF current Output current (see Fig.7) IGCLF IGCLF IGCLF VDETn2 < VDET < VDETp2 Re1, Re2 outputs (pin 21, pin 20) Output current IRe1 IRe1 IRe2 IRe2 VRe1 VRe2 ZRe1 ZRe2 at ID1 = ID2 = 1 µA; ID3 = ID4 = 0 at ID1 = ID2 = ID3 = ID4 = 0 at lD1 = ID2 = 0; ID3 = ID4 = 1 µA at lD1 = ID2 = ID3 = ID4 = 0 Output voltage pin 21 pin 20 Output impedance pin 21 pin 20 Reference current (Iret) Iret VLPF Iret = IRe1 = IRe2 LPF output (pin 14) DC voltage level note 9 VP-2,1 VP-1,7 note 200 220 - - 1 1 1 1 - - VGCLF = 3,5 V 110 - 110 - 128 0 128 0 VDETVDETp2 IDT < IDT3 IDT > IDT3; note 8 - -0,2 IBgc - S6-10 -0,6 IBgc S6 IDT3 - - - - 1 2,8 25 1,6 note 7 note 7 -4,5 -4,5 -3 -3 note 6 note 6 -4,5 -4,5 -3 -3 -0,1 0,7 CONDITIONS MIN. S2-1 S2 TYP.
TDA8808T TDA8808AT
MAX. S2+1 3 UNIT
-1,5 -1,5 -1,5 -1,5
dB dB dB dB
- - - - ± 10 S6+10 ±2
V V M mA µA µA µA
168 - 168 - VP VP - -
mA mA mA mA V V M M µA
240 VP-1,4
V
November 1987
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Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
SYMBOL ZLPF PARAMETER Input impedance FOC START input (pin 9) Start current (ST) for FE IST IST Start voltage (ST) for FE VST VST FElag output (pin 16) Output voltage VFElag VFElag ZFElag TDA8808T TDA8808AT Output impedance Output current IFElag=IO IFElag ID1 = ID2 = 1D3 = ID4 = 1 µA ID2 = ID3 = 1 µA; ID1 = ID4 = 2 µA ID2 = ID3 = 2 µA; IFElag ID1 = ID4 = 1 µA ID2 = ID3 = 2 µA; IFElag IFElag ID1 = ID4 = 1 µA ID2 = ID3 = 1 µA; ID1 = ID4 = 2 µA FE output (pin 15) Output voltage VFE VFE ZFE TDA8808T TDA8808AT Output impedance Output current ID1 = ID4 = 2 µA; IFE IFE IFE IFE ID2 = ID3 = 1 µA ID1 = ID4 = 1 µA; ID2 = ID3 = 2 µA ID1 = ID4 = 2 µA; ID2 = ID3 = 1 µA ID1 = ID4 = 1 µA; ID2 = ID3 = 2 µA VSc = 1,25 V 11 -10% -4S1-67+IST VSc = 1,25 V -10% VSc = 0 -10% -4S1-67-IST VSc = 0 -10% note 10 Vext+1,5 +1,5 - - - 8 VSc = 1,5 V see Fig.8 -5 0 VSc = 1,5 V -5 0 VSc = VP -10% -2S1 +IO VSc = VP -10% -2S1 +IO Si/RD = HIGH Z; VGCLF = 3,5 V VSc = VP -10 0 Vext+l,5 +1,5 - - - 8 (VFOC START = VST) Si/RD = HIGH Z Si/RD = LOW see Fig.8 430 -20 530 0 (-IFOC START = IST) Si/RD = HIGH Z Si/RD = LOW 75 - 150 0 CONDITIONS - MIN. 3 TYP.
TDA8808T TDA8808AT
MAX. - UNIT k
500 - 630 20
µA µA mV mV
VP-1,5 Vext-1,5 -
V V M
+10
+10%
µA µA
+10%
µA
+5 +5
µA µA
VP-1,5 Vext-1,5 -
V V M
-2S1-134-IST +10% +10%
µA µA µA µA
-2S1-134+IST +20% +20%
November 1987
Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
SYMBOL IFE IFE IFE = S6 IFE IFE IFE PARAMETER ID1 = ID4 = 2 µA; ID2 = ID3 = 1 µA ID1 = ID4 = 1 µA; ID2 = ID3 = 2 µA ID1 = ID4 = 2 µA; ID2 = ID3 = 1 µA ID1 = ID4 = 1 µA; ID2 = ID3 = 2 µA ID1 = ID2 = ID3 = ID4 = 1 µA ID1 = ID2 = ID3 = ID4 = 0 DODS logic input (pin 12) Switching levels VDODS VDODS IDODS input voltage LOW input voltage HIGH Input source current Starting input (Sc) VSc VSc ZSc ISc ISc Output sink current Si/RD logic input/output (pin 20) Voltage `forced LOW' VSi/RD Switching levels VSi/RD VSi/RD ISi/RD input voltage LOW input voltage HIGH Z Input source current LOW TL logic output (pin 11) Output voltage level LOW VTL Output voltage level HIGH VTL see Fig.6 ITL = 400 µA; (sink current) ITL = -50 µA; (source current) 2,4 - - 0,15 ISi/RD = -5 µA - 2,4 -35 - 2,8 -25 see Fig.9 ISi/RD = 400 µA; VSc = 2,5 V; VGCLF < 2,8 V - 0,15 Output voltage Output voltage Output impedance Output source current Si/RD = HIGH Z; VSc = 1,5 V Si/RD = LOW -1,2 0,5 -1 1,2 see Fig.9 Si/RD = LOW - - 0 - * - +2 -35 - - -25 VSc = VP -5 0 VSc = VP -10 0 VSc = VP -15% -S6 VSc = VP -20% 67 VSc = 1,75 V -10% -4S1-67+IST VSc = 1,75 V -20% -2S1+67+IST CONDITIONS MIN. TYP.
TDA8808T TDA8808AT
MAX. +10% +20% +20% +15% +10 +5 UNIT µA µA µA µA µA µA
+0,8 - -15 - VP-0,5 - -0,8 2,0
V V µA
V V M µA mA
S1/RD = HIGH Z -
0,4 +0,8 - -15
V V V µA
0,4 -
V V
November 1987
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Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
SYMBOL PARAMETER Threshold total LF current Output voltage VDET < VDETn2 or VTL VTL VTL VTL VDET > VDETp2 VDETn1 < VDET < VDETp1 VDETn2 < VDET < VDETn1 or VDETp1 < VDET < VDETp2 VDETn2 < VDET < VDETn1 or VDETp1 < VDET < VDETp2 Output voltage VDET < VDETn2 or VTL VTL VTL ITL ITL 1 2 3 4 LO output (pin 17) VLO ZLO ILO ILO VLM ILM Output voltage Output impedance Output leakage current Maximum output current LM input (pin 18) Input voltage Input bias current Laser supply Transconductance GLDC GLDC For DC (note 11) Si/RD = HIGH Z Si/RD = LOW - - 0,5 0 closed loop 185 -2 205 - Si/RD = LOW Si/RD = HIGH Z - - -10 -8 - 95 -0,1 -4 VDET > VDETp2 VDETn2 < VDET < VDETp2 VDETn2 < VDET < VDETp2 Output sink current Output source current Delay times (see Fig.10) see Fig.6 IDT don't care IDT < IDT2 IDT > IDT2 VTL = LOW VTL = HIGH 2,4 2,4 - 1 - 7 1-15% or 6,5 7 3-10% or 7 - - 0,15 2,2 -100 8,5 - 8,5 - IDT > IDT2 DODS = LOW ( 0,8 V) - 0,15 IDT < IDT2 2,4 - IDT don't care IDT don't care 2,4 2,4 - - CONDITIONS IDT2 DODS = HIGH ( 2,4 V) - MIN. 3,9 TYP.
TDA8808T TDA8808AT
MAX. - UNIT µA
- - - 0,4
V V V V
- - 0,4 - -50 10 1+ 5% or 10 10 3+10% or 10
V V V mA µA µs µs µs µs
VP - 0,5 - 0 -2
V k µA mA
225 -
mV µA
- -
A/V A/V
November 1987
13
Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
SYMBOL LO * ** PARAMETER For AC (note 12) delay time Value to be fixed. X = don't care. CONDITIONS - MIN. * TYP.
TDA8808T TDA8808AT
MAX. - UNIT ns
Notes to the characteristics 1. Voltage output signal VO1 measured at fHFin = 700 kHz; IHFin(p-p) = 7 µA; VGCHF = 2,4 V. Voltage output signal VO2 measured at fHFin = 100 kHz; IHFin(p-p) = 7 µA; VGCHF = 2,4 V. 2. Voltage output signal VO1 measured at fHFin = 1 MHz; IHFin(p-p) = 7 µA; VGCHF = 2,4 V. Voltage output signal VO2 measured at fHFin = 100 kHz; IHFin(p-p) = 7 µA; VGCHF = 2,4 V. 3. Phase of input/output signal, group delay and flatness measured at IHFin(p-p) = 1 µA; VGCHF = 4 V. d Group delay = ------- ; f 50 kHz. dw Flatness: = max - min. 4. HF part output voltage for closed loop conditions; fHFin = 500 kHz. 5. HF part output voltage for closed loop conditions; fHFin = 0,1 to 1 MHz. M1 is the measured value of VO1. 6. I Re1 ( 1 ) I D1 ( 2 ) + I D2 ( 2 ) P 1 is the measured value of ------------------------------------------ -------------------------------------------I D1 ( 1 ) + I D2 ( 1 ) I Re1 ( 2 ) (1) are the current levels at fi = 25 kHz. (2) are the current levels at fi = 1 kHz. Measurement taken at VGCLF = 3,5 V. 7. I D3 ( 2 ) + I D4 ( 2 ) I Re2 ( 1 ) P 2 is the measured value of ------------------------------------------ -------------------------------------------I D3 ( 1 ) + I D4 ( 1 ) I Re2 ( 2 ) Where: (1) are the current levels at fi = 25 kHz. (2) are the current levels at fi = 1 kHz. Measurement taken at VGCLF = 3,5 V. Where:
I DT 8. S6 is the measured value of S 1 ------- 1, 1 I Bgc 4 Measurement taken at VGCLF = 3,5 V. 9. LF part reference current Iret and low-pass filter output voltage for closed loop conditions. Measurement taken at IDT > IDT3; VDET < VDETn2 or VDET > VDETp2. V FOC START 10. FE output current measured at V GCLF = 3, 5 V and Si / RD = HIGH Z ; I ST = ------------------------------R FOC START 11. Laser supply transconductance for DC I LO G LDC = ------------- ( 0 < I LO < 2 mA ) V LM
November 1987
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Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
12. Laser supply transconductance for AC 1 G LAC = G LO ----------------------------1 + S LO Where: S is the laplace operator in the frequency domain.
TDA8808T TDA8808AT
-------
DODS = HIGH DODS = LOW
Fig.5 HF gain control current (IGCHF) as a function of input voltage VDET.
November 1987
15
Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
TDA8808T TDA8808AT
(1) IDT > IDT1 - - - - - - - - IDT < IDT1 IDT = ID1 + ID2 + ID3 + ID4 IDT1 = 2,67 IBgc/S1 IDT2 = 5 IBgc/S1 S1 = average maximum LF gain
(2) IDT > IDT2 - - - - - - - - IDT < IDT2 DODS = LOW (3)
IDT > IDT2
- - - - - - - - IDT < IDT2 DODS = HIGH
Fig.6 TL voltage as a function of input voltage VDET.
November 1987
16
Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
TDA8808T TDA8808AT
- - - - - - - - IDT > IDT3 IDT < IDT3 IDT = ID1 + ID2 + ID3 + ID4 IDT3 = 2 IBgc/S1 S1 = average maximum LF gain
Fig.7 LF gain control current (IGCLF) as a function of input voltage VDET.
November 1987
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Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
TDA8808T TDA8808AT
IST Icont Icont IDT IDT3 S1 (1 + 4)NN (2 + 3)NN ( 1 + 4) N ( 2 + 3) N
= = = = = =
-IFOC START 2 IBgc if IDT > IDT3 IDT × S1 if IDT < IDT3 ID1 + ID2 + ID3 + ID4 2 IBgc/S1 average maximum LF gain
= not normalized currents = (ID1 + ID4) S1 = not normalized currents = (ID2 + I D3) S1 I D1 I D4 = normalized currents = --------------------- + --------------------- × I cont I D1 + I D2 I D3 + I D4 I D2 I D3 = normalized currents = --------------------- + --------------------- × I cont I D1 + I D2 I D3 + I D4
Vj is the junction voltage (0,7 V typ.).
Fig.8 FElag current output as a function of starting voltage input (VSc).
November 1987
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Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
TDA8808T TDA8808AT
RD: Si/RD forced LOW for ready signal VGCLF < 2,8 V -------- VGCLF > 3,5 V Vj is the junction voltage (0,7 V typ.)
Fig.9 Si/RD signal as a function of VSc.
Fig.10 Delay times between VDET and VTL.
November 1987
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Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
PACKAGE OUTLINE SO28: plastic small outline package; 28 leads; body width 7.5 mm
TDA8808T TDA8808AT
SOT136-1
D
E
A X
c y HE v M A
Z 28 15
Q A2 A1 pin 1 index Lp L 1 e bp 14 w M detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 18.1 17.7 0.71 0.69 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 0.42 0.39 L 1.4 0.055 Lp 1.1 0.4 0.043 0.016 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
8o 0o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT136-1 REFERENCES IEC 075E06 JEDEC MS-013AE EIAJ EUROPEAN PROJECTION
ISSUE DATE 91-08-13 95-01-24
November 1987
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Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 °C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C. Wave soldering Wave soldering techniques can be used for all SO packages if the following conditions are observed: · A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. · The longitudinal axis of the package footprint must be parallel to the solder flow. · The package footprint must incorporate solder thieves at the downstream end.
TDA8808T TDA8808AT
During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 °C within 6 seconds. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
November 1987
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Philips Semiconductors
Product specification
Photo diode signal processor for compact disc players
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TDA8808T TDA8808AT
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1987
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