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IRF540 IRF540FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE IRF540 IRF540FI
s s s s s s s
V DSS 100 V 100 V
R DS( on) < 0.077 < 0.077
ID 30 A 16 A
TYPICAL RDS(on) = 0.045 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220
3 1 2
1 2
3
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M(·) P tot V ISO T stg Tj Parameter IRF540 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (cont.) at Tc = 25 C Drain Current (cont.) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o o
Value IRF540FI 100 100 ± 20 30 21 120 150 1 -65 to 175 175 16 11 120 45 0.3 2000
Unit V V V A A A W W/ o C V
o o
C C
(·) Pulse width limited by safe operating area
July 1993
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THERMAL DATA
TO-220 R thj-cas e Rthj- amb R th c-s Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 ISOWATT220 3.33
o o o
C/W C/W C/W o C
Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) Repetitive Avalanche Energy (pulse width limited by T j max, < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, < 1%)
o
Max Value 30 200 50 21
Unit A mJ mJ A
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF
Symbol V( BR)DSS I DS S IG SS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VG S = 0 Min. 100 250 1000 ± 100 Typ. Max. Unit V µA µA nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 20 V
T c = 125 oC
ON ()
Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Conditions ID = 250 µA ID = 17 A VG S = 10 V 30 Min. 2 Typ. 2.9 0.045 Max. 4 0.077 Unit V A
V DS > ID( on) x RD S(on) max
DYNAMIC
Symbol gfs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > ID( on) x RD S(on) max V DS = 25 V f = 1 MHz ID = 17 A VG S = 0 Min. 10 Typ. 18 1600 460 140 2100 600 200 Max. Unit S pF pF pF
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ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD
Symbol t d(on) tr t d(off ) tf Qg Q gs Q gd Parameter Turn-on Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 50 V ID = 5 A VG S = 10 V R i = 50 (see test circuit) I D = 30 A V GS = 10 V V DD = Max Rating x 0.8 (see test circuit) Min. Typ. 55 110 290 125 55 11 26 Max. 80 160 410 180 80 Unit ns ns ns ns nC nC nC
SOURCE DRAIN DIODE
Symbol IS D I SDM(·) V S D () t rr Q rr Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge I SD = 30 A VG S = 0 140 0.7 I SD = 30 A di/dt = 100 A/µs T j = 150 o C VDD = 50 V Test Conditions Min. Typ. Max. 30 120 1.6 Unit A A V ns µC
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area
Safe Operating Area for TO-220 Package
Safe Operating Area for ISOWATT220 Package
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Thermal Impedance for TO-220 Package
Thermal Impedance for ISOWATT220 Package
Derating Curve for TO-220 Package
Derating Curve for ISOWATT220 Package
Output Characteristics
Transfer Characteristics
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Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temperature
Normalized On Resistance vs Temperature
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Source-drain Diode Forward Characteristics
Unclamped Inductive Load Test Circuit
Unclamped Inductive Waveforms
Switching Time Test Circuit
Gate Charge Test Circuit
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TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2 F1
D
G1
E
Dia. F2 F
L5 L7 L6
L9
L4
G
H2
P011C
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ISOWATT220 MECHANICAL DATA
DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Ø 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409
A
B
L3 L6 L7 F1 Ø F
D
G1
E
H
F2
1 2 3 L2 L4
P011G
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G
IRF540/FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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