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DISCRETE SEMICONDUCTORS

DATA SHEET

M3D176

1N4148; 1N4448 High-speed diodes
Product specification Supersedes data of 2002 Jan 23 2004 Aug 10

Philips Semiconductors

Product specification

High-speed diodes
FEATURES · Hermetically sealed leaded glass SOD27 (DO-35) package · High switching speed: max. 4 ns · General application · Continuous reverse voltage: max. 100 V · Repetitive peak reverse voltage: max. 100 V · Repetitive peak forward current: max. 450 mA. APPLICATIONS · High-speed switching. DESCRIPTION The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD27 (DO-35) packages. MARKING TYPE NUMBER 1N4148 1N4448 ORDERING INFORMATION PACKAGE TYPE NUMBER NAME 1N4148 1N4448 - DESCRIPTION
The diodes are type branded.
handbook, halfpage k

1N4148; 1N4448

a

MAM246

Fig.1

Simplified outline (SOD27; DO-35) and symbol.

MARKING CODE 1N4148PH or 4148PH 1N4448

VERSION SOD27

hermetically sealed glass package; axial leaded; 2 leads

2004 Aug 10

2

Philips Semiconductors

Product specification

High-speed diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board; lead length 10 mm. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF 1N4148 1N4448 IR IR Cd trr reverse current reverse current; 1N4448 diode capacitance reverse recovery time PARAMETER forward voltage see Fig.3 IF = 10 mA IF = 5 mA IF = 100 mA VR = 20 V; see Fig.5 VR = 20 V; Tj = 150 °C; see Fig.5 VR = 20 V; Tj = 100 °C; see Fig.5 f = 1 MHz; VR = 0 V; see Fig.6 - - - - CONDITIONS total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 - - - - see Fig.2; note 1 CONDITIONS - - - -

1N4148; 1N4448

MIN.

MAX. 100 100 200 450 V V

UNIT

mA mA

4 1 0.5 500 +200 200

A A A mW °C °C

-65 -

MIN. 1

MAX. V V V

UNIT

0.62 -

0.72 1 25 50 3 4 4

nA µA µA pF ns

when switched from IF = 10 mA to - IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 50 mA; tr = 20 ns; see Fig.8 -

Vfr

forward recovery voltage

2.5

V

THERMAL CHARACTERISTICS SYMBOL Rth(j-tp) Rth(j-a) Note 1. Device mounted on a printed-circuit board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 350 UNIT K/W K/W

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Philips Semiconductors

Product specification

High-speed diodes
GRAPHICAL DATA

1N4148; 1N4448

300 IF (mA) 200

mbg451
handbook, halfpage

600

MBG464

IF (mA) 400
(1) (2) (3)

100

200

0 0 100 Tamb (°C) 200

0 0 (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. 1 VF (V) 2

Device mounted on an FR4 printed-circuit board; lead length 10 mm.

Fig.2

Maximum permissible continuous forward current as a function of ambient temperature.

Fig.3

Forward current as a function of forward voltage.

102 handbook, full pagewidth IFSM (A)

MBG704

10

1

10-1 1 Based on square wave currents. Tj = 25 °C prior to surge. 10

102

103

tp (µs)

104

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

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Philips Semiconductors

Product specification

High-speed diodes

1N4148; 1N4448

103 IR (µA) 102

mgd290

MGD004

handbook, halfpage

1.2

Cd (pF) 1.0
(1) (2)

10

0.8
1

10-1

0.6

10-2 0 100 Tj (°C) 200

0.4 0 10 VR (V) 20

(1) VR = 75 V; typical values. (2) VR = 20 V; typical values.

f = 1 MHz; Tj = 25 °C.

Fig.5

Reverse current as a function of junction temperature.

Fig.6

Diode capacitance as a function of reverse voltage; typical values.

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Philips Semiconductors

Product specification

High-speed diodes

1N4148; 1N4448

handbook, full pagewidth

tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90%

tp t

RS = 50 V = VR I F x R S

IF

IF

t rr t

(1)

MGA881

input signal

output signal

(1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I

1 k

450

I 90%

V

R = 50 S

D.U.T.

OSCILLOSCOPE R i = 50 10%
MGA882

V fr

t tr tp

t

input signal

output signal

Fig.8 Forward recovery voltage test circuit and waveforms.

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Philips Semiconductors

Product specification

High-speed diodes
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads

1N4148; 1N4448

SOD27

(1)

b

D

L

G1

L

DIMENSIONS (mm are the original dimensions) UNIT mm b max. 0.56 D max. 1.85 G1 max. 4.25 L min. 25.4 0 1 scale 2 mm

Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD27 REFERENCES IEC A24 JEDEC DO-35 EIAJ SC-40 EUROPEAN PROJECTION ISSUE DATE 97-06-09

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Philips Semiconductors

Product specification

High-speed diodes
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION

1N4148; 1N4448

This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).

II

Preliminary data Qualification

III

Product data

Production

Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

2004 Aug 10

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Philips Semiconductors ­ a worldwide company

Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected].

© Koninklijke Philips Electronics N.V. 2004

SCA76

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Printed in The Netherlands

R76/05/pp9

Date of release: 2004

Aug 10

Document order number:

9397 750 13541