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2SC5139
Silicon NPN Epitaxial
ADE-208-226A (Z) 2nd. Edition Mar. 2001 Application
VHF / UHF wide band amplifier
Features
· High gain bandwidth product fT = 11 GHz typ · High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz
Outline
SMPAK
3 1 2
1. Emitter 2. Base 3. Collector
Note:
Marking is "YZ".
Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.
2SC5139
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 80 150 55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown boltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO hFE Cob fT PG NF Min 15 -- -- -- 50 -- 8 11.5 -- Typ -- -- -- -- 120 0.65 11 15 1.1 Max -- 1 1 10 250 1.15 -- -- 2.0 pF GHz dB dB Unit V µA mA µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 4 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 4 V, IC = 20 mA VCE = 4 V, IC = 20 mA, f = 900 MHz VCE = 4 V, IC = 5 mA, f = 900 MHz
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2SC5139
Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 160 200 DC Current Transfer Ratio h FE DC Current Transfer Ratio vs. Collector Current
160
120
120
80
80
40
40 0 0.01 VCE = 4 V Pulse Test 0.1 1 10 Collector Current I C (mA) 100
0
50 100 150 Ambient Temperature Ta (°C)
200
20 Gain Bandwidth Product f T (GHz)
VCE = 4V 16
Collector Output Capacitance Cob (pF)
Gain Bandwidth Product vs. Collector Current
2.0
Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz
1.6
12
1.2
8
0.8
4 0 1 2 5 10 20 Collector Current I C (mA) 50
0.4
0 0.1 0.2 0.5 1 2 5 10 20 Collector to Base Voltage V CB (V)
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2SC5139
20 Power Gain vs. Collector Current f = 900 MHz VCE = 4V Noise Figure NF (dB) Power Gain PG (dB) 16 8 10 Noise Figure vs. Collector Current f = 900 MHz VCE = 4V
12
6
8
4
4 0 0.1 0.2
2 0 0.1 0.2
0.5 1 2 5 10 20 Collector Current I C (mA)
50
0.5 1 2 5 10 20 Collector Current I C (mA)
50
4
2SC5139
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 10 .2 5 4 3 .4 .6 .8 1.5 2 120° 90° 60° 1 180° 0° 150° 30° 1 1.5 2
S21 Parameter vs. Frequency
90° 120°
Scale: 5 / div.
60°
150°
30°
Condition: V CE = 4 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA)
Condition: V CE = 4 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA)
S12 Parameter vs. Frequency
90° 120°
S22 Parameter vs. Frequency
.8 .6 .4 3 1 1.5 2
Scale: 0.04 / div.
60°
150°
30° .2
4 5 10
180°
0°
0
.2
.4
.6 .8 1.0 1.5 2
3 45
10 10
.2 150° 30° .4 120° 90° 60° .6 .8 1.5 2 1
5 4 3
Condition: V CE = 4 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA)
Condition: V CE = 4 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA)
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2SC5139
S11 Parameter vs. Frequency
.8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 10 .2 5 4 3 .4 .6 .8 1.5 2 120° 90° 60° 1 180° 0° 150° 30° 1 1.5 2
S21 Parameter vs. Frequency
90° 120°
Scale: 4 / div.
60°
150°
30°
Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA)
Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA)
S12 Parameter vs. Frequency
90° 120°
S22 Parameter vs. Frequency
.8 .6 .4 3 1 1.5 2
Scale: 0.04 / div.
60°
150°
30° .2
4 5 10
180°
0°
0
.2
.4
.6 .8 1.0 1.5 2
3 45
10 10
.2 150° 30° .4 120° 90° 60° .6 .8 1.5 2 1
5 4 3
Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA)
Condition: V CE = 1 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA)
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2SC5139
Package Dimensions As of January, 2001
Unit: mm
1.6 ± 0.2 0.3 0.05 1.6 ± 0.2
+0.1
0.15 0.05 0.4 0.8 ± 0.1 0.4 0 0.1
+0.1
3
2
0.2 0.05 0.5 0.5 1.0 ± 0.1
+0.1
1
0.2 0.05 0.7 ± 0.1
+0.1
0.55
Hitachi Code JEDEC EIAJ Mass (reference value)
SMPAK -- Conforms 0.003 g
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2SC5139
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
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Copyright © Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
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