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2SC5139 Silicon NPN Epitaxial ADE-208-226A (Z) 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features · High gain bandwidth product fT = 11 GHz typ · High gain, low noise figure PG = 15 dB typ, NF = 1.1 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "YZ­". Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. 2SC5139 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 80 150 ­55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown boltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure I EBO hFE Cob fT PG NF Min 15 -- -- -- 50 -- 8 11.5 -- Typ -- -- -- -- 120 0.65 11 15 1.1 Max -- 1 1 10 250 1.15 -- -- 2.0 pF GHz dB dB Unit V µA mA µA Test conditions I C = 10 µA, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 4 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 4 V, IC = 20 mA VCE = 4 V, IC = 20 mA, f = 900 MHz VCE = 4 V, IC = 5 mA, f = 900 MHz 2 2SC5139 Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 160 200 DC Current Transfer Ratio h FE DC Current Transfer Ratio vs. Collector Current 160 120 120 80 80 40 40 0 0.01 VCE = 4 V Pulse Test 0.1 1 10 Collector Current I C (mA) 100 0 50 100 150 Ambient Temperature Ta (°C) 200 20 Gain Bandwidth Product f T (GHz) VCE = 4V 16 Collector Output Capacitance Cob (pF) Gain Bandwidth Product vs. Collector Current 2.0 Collector Output Capacitance vs. Collector to Base Voltage IE = 0 f = 1 MHz 1.6 12 1.2 8 0.8 4 0 1 2 5 10 20 Collector Current I C (mA) 50 0.4 0 0.1 0.2 0.5 1 2 5 10 20 Collector to Base Voltage V CB (V) 3 2SC5139 20 Power Gain vs. Collector Current f = 900 MHz VCE = 4V Noise Figure NF (dB) Power Gain PG (dB) 16 8 10 Noise Figure vs. Collector Current f = 900 MHz VCE = 4V 12 6 8 4 4 0 0.1 0.2 2 0 0.1 0.2 0.5 1 2 5 10 20 Collector Current I C (mA) 50 0.5 1 2 5 10 20 Collector Current I C (mA) 50 4 2SC5139 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1.0 1.5 2 3 45 10 ­10 ­.2 ­5 ­4 ­3 ­.4 ­.6 ­.8 ­1.5 ­2 ­120° ­90° ­60° ­1 180° 0° 150° 30° 1 1.5 2 S21 Parameter vs. Frequency 90° 120° Scale: 5 / div. 60° ­150° ­30° Condition: V CE = 4 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) Condition: V CE = 4 V , Zo = 50 200 to 2000 MHz (200 MHz step) (I C = 5 mA) (I C = 20 mA) S12 Parameter vs. Frequency 90° 120° S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 Scale: 0.04 / div. 60° 150° 30° .2 4 5 10 180° 0° 0 .2 .4