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FQA12N60 April 2000 QFET FQA12N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features · · · · · · 12A, 600V, RDS(on) = 0.7 @ VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! G DS ! " " " TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) FQA12N60 600 12 7.6 48 ±30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ Vns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) 790 12 24 4.5 240 1.92 -55 to +150 300 - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.24 -Max 0.52 -40 Units °CW °CW °CW ©2000 Fairchild Semiconductor International Rev. A, April 2000 FQA12N60 Electrical CharacteristicsT Symbol Parameter C = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.71 ------10 100 100 -100 V V/°C µA µA nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6.0 A VDS = 50 V, ID = 6.0 A (Note 4) 3.0 --- -0.55 11 5.0 0.7 -- V S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1480 200 25 1900 270 35 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 12 A, VGS = 10 V (Note 4, 5) (Note 4, 5) VDD = 300 V, ID = 12 A, RG = 25 -------- 30 115 95 85 42 8.6 21 70 240 200 180 54 --- n