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DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. PACKAGE DRAWING (UNIT: mm) FEATURES · High hFE and low VCE(sat): hFE 100 (VCE = 2 V, IC = 2 A) VCE(sat) 0.3 V (IC = 6 A, IB = 0.3 A) · Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Tc = 25°C) PT (Ta = 25°C) Tj Tstg Ratings 100 60 7.0 10 20 5.0 30 2.0 150 -55 to +150 Unit V V V A A A W W °C °C (OHFWURGH &RQQHFWLRQ %DVH &ROOHFWRU (PLWWHU * PW 300 µs, duty cycle 10% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15597EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998 2SC4551 ELECTRICAL CHARACTERISTICS (Ta = 25°C) ° Parameter Collector to emitter voltage Collector to emitter voltage Symbol VCEO(SUS) VCEX(SUS) Conditions IC = 6.0 A, IB = 0.6 A, L = 1 mH IC = 6.0 A, IB1 = -IB2 = 0.6 A, VBE(OFF) = -1.5 V, L = 180 µH, clamped VCB = 60 V, IE = 0 VCE = 60 V, RBE = 50 , Ta = 125°C VCE = 60 V, VBE(OFF) = -1.5 V VCE = 60 V, VBE(OFF) = -1.5 V, Ta = 125°C VEB = 5.0 V, IC = 0 VCE = 2.0 V, IC = 1.0 A VCE = 2.0 V, IC = 2.0 A VCE = 2.0 V, IC = 6.0 A IC = 6.0 A, IB = 0.3 A IC = 8.0 A, IB = 0.4 A IC = 6.0 A, IB = 0.3 A IC = 8.0 A, IB = 0.4 A VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC = 1.0 A IC = 6.0 A, RL = 8.3 , IB1 = -IB2 = 0.3 A, VCC 50 V Refer to the test circuit. Fall time tf 0.3 150 140 0.3 1.5 100 100 60 0.3 0.5 1.2 1.5 V V V V pF MHz 200 400 MIN. 60 60 TYP. MAX. Unit V V Collector cutoff current Collector cutoff current Collector cutoff current Collector cutoff current ICBO ICER ICEX1 ICEX2 10 1.0 10 1.0 µA mA µA mA Emitter cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Collector saturation voltage Base saturation voltage Base saturation voltage Collector capacitance Gain bandwidth product Turn-on time Storage time IEBO hFE1* hFE2* hFE3* VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2* Cob fT ton tstg 10 µA µs µs µs * Pulse test PW 350 µs, duty cycle 2% hFE CLASSIFICATION Marking hFE2 M 100 to 200 L 150 to 300 K 200 to 400 SW