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NTE2640 Silicon NPN Transistor Color TV Horizontal Deflection Output Features: D High Speed D High Collector­Emitter Breakdown Voltage D High Reliability D On­Chip Damper Diode Absolute Maximum Ratings: (TA + 25°C unless otherwise specified) Collector­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Collector Dissipation, PC TA + 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC + 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ­55° to +150°C Electrical Characteristics: (TA + 25°C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICBO ICES Emitter Cutoff Current Collector­Emitter Sustaining Voltage Collector­Emitter Saturation Voltage Base­Emitter Saturation Voltage DC Current Gain IEBO VCE(sat) VBE(sat) hFE VF tf Test Conditions VCE = 800V, IE = 0 VCE = 1500V, RBE = 0 VEB = 4V, IC = 0 IC = 3.15A, IB = 630mA IC = 3.15A, IB = 630mA VCE = 5V, IC = 500mA VCE = 5V, IC = 3.5A Diode Forward Voltage Fall Time IEC = 6A VCC = 200V, VBE = ­2V, IC = 2A, IB1 = 400mA, IB2 = 800mA, Pulse Width = 20µs, Duty Cycle 1% Min ­ ­ 40 800 ­ ­ 10 5 ­ ­ Typ ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ Max 10 1.0 ­ ­ 3.0 1.5 ­ 8 2 0.3 V µs Unit µA mA mA V V V VCEO(sus) IC = 100mA, IB = 0 .177 (4.5) .394 (10.0) .138 (3.5) Isol .110 (2.8) .283 (7.2) .630 (16.0) .634 (16.1) B C E .142 (3.6) .024 (0.6) .551 (14.0) .100 (2.54)