Microsemi 2n2604 2n2605 free download

File name 2n2604_2n2605.pdf

TECHNICAL DATA PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/354 Devices Qualified Level JAN, JANTX 2N2604 2N2605 JANTXV MAXIMUM RATINGS Ratings Symbol 2N2604 2N2605 Units Collector-Base Voltage VCBO 80 70 Vdc Collector-Emitter Voltage VCEO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 30 mAdc Total Power Dissipation @ TA = +250C(1) PT 400 mW/0C 0 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0 TO-46* Thermal Resistance, Junction-to-Case RJC 0.437 C/mW (TO-206AB) 1) Derate linearly 2.28 mW/0C above TA = +250C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 10