Supertex tn2106 free download

File name tn2106.pdf

TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This low threshold, enhancement-mode (normally-off) Low power drive requirement transistor utilizes a vertical DMOS structure and Supertex's Ease of paralleling well-proven, silicon-gate manufacturing process. This Low CISS and fast switching speeds combination produces a device with the power handling Excellent thermal stability capabilities of bipolar transistors and the high input Integral source-drain diode impedance and positive temperature coefficient inherent High input impedance and high gain in MOS devices. Characteristic of all MOS structures, this Complementary N- and P-channel devices device is free from thermal runaway and thermally-induced secondary breakdown. Applications Supertex's vertical DMOS FETs are ideally suited to a Logic level interfaces - ideal for TTL and CMOS wide range of switching and amplifying applications where Solid state relays very low threshold voltage, high breakdown voltage, high Battery operated systems input impedance, low input capacitance, and fast switching Photo-voltaic drives speeds are desired. Analog switches General purpose line drivers Telecom switches Ordering Information Package Option RDS(ON) VGS(th) BVDSS/BVDGS Device (max) (max) TO-236AB (SOT-23) TO-92 (V)