Microsemi 2n7370 free download

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TECHNICAL DATA NPN DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/624 Devices Qualified Level JAN 2N7370 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage VCEO 100 Vdc Collector-Base Voltage VCBO 100 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Base Current IB 0.2 Adc Collector Current IC 12 Adc Total Power Dissipation @ TC = +250C (1) PT 100 W 0 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +175 C THERMAL CHARACTERISTICS TO-254* Characteristics Symbol Max. Unit 0 Thermal Resistance, Junction-to-Case RJC 1.5 C/W 0 0 1) Derate linearly 0.667 W/ C above TC > +25 C *See Appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc VCEO(sus) 100 Vdc Collector-Emitter Cutoff Current VCE = 50 Vdc ICEO 1.0 mAdc Collector-Emitter Cutoff Current VCE = 100 Vdc, VBE = 1.5 Vdc ICEX 0.5 mAdc Emitter-Base Cutoff Current VEB = 5.0 Vdc IEBO 2.0 mAdc 6 Lake Street, Lawrence, MA 01841 120101 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2